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P6SMBJ200

Description
ESD Suppressors / TVS Diodes 162Vso 180Vbr 2.1A
CategoryDiscrete semiconductor    diode   
File Size404KB,4 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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P6SMBJ200 Overview

ESD Suppressors / TVS Diodes 162Vso 180Vbr 2.1A

P6SMBJ200 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
Parts packaging codeDO-214AA
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage220 V
Minimum breakdown voltage180 V
Breakdown voltage nominal value200 V
Maximum clamping voltage274 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage162 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
Silicon Avalanche Diodes
600W Surface Mount Transient Voltage Supressors
RoHS
P6SMBJ Series
®
FEATURES
RoHS
compliant
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low lead inductance
Repetition Rate (duty cycle): 0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
BV for unidirectional types
Typical IR less than 1 µmA above 10V
High Temperature soldering: 250˚C/10 seconds at terminals
LE
PARAMETER
MAXIMUM RATINGS AND CHARACTERISTICS
@25˚C AMBIENT TEMPERATURE (unless otherwise noted)
SYMBOL
PPPM
VALUE
Min
600
UNIT
Watts
Peak pulse power Dissipation on
10/1000µs waveform
(note 1,2, FIG.1)
Peak pulse current of on 10\1000µs
waveform (note 1, FIG.3)
Peak forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 2.3)
Operating junction and Storage
Temperature Range
Agency Approvals:
Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number:
E128662
SO
TE
IPPM
SEE TABLE 1 Amps
IPSM
100
Amps
Tj, TsTG -55 to +150
°C
Excellent clamping capability
O
ORDERING INFORMATION
P6SMBJ
CA
B
Voltage
Bi-Directional
5% Voltage Tolerance
Tape and reeled (3000 pcs)
266
Note 1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25˚C per Fig.2
Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each
terminal
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,
Duty cycle= 4 pulses per minute
Mechanical Specifications:
Weight:
Case:
Mounting Position:
Polarity:
Terminal:
Standard Packaging:
0.003ounce, 0.093 gram
JEDEC DO-214AA Molded Plastic over
glass passivated junction
Any
Color band denotes cathode except
Bidirectional
Solder Plated solderable per
MIL-STD-750, Method 2026
12mm tape (EIA STF RS-481)
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