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MH8S72DBFD-7

Description
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Categorystorage    storage   
File Size971KB,56 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

MH8S72DBFD-7 Overview

603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

MH8S72DBFD-7 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionDIMM, DIMM168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density603979776 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.034 A
Maximum slew rate1.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH8S72DBFD-7,-8
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DESCRIPTION
The MH8S72DBFD is 8388608 - word x 72-bit Sy nchronous
DRAM module. This consist of nine industry standard
8M x 8 Sy nchronous DRAMs in TSOP.
The TSOP on a card edge dual in-line package prov ides any
application where high densities and large of quantities memory
are required.
This is a socket-ty pe memory m odule ,suitable f or easy
interchange or addition of m odule.
85pin
1pin
FEATURES
Type name
Max.
Frequency
CLK
Access Time
[component level]
94pin
95pin
10pin
11pin
MH8S72DBFD-7
MH8S72DBFD-8
100MHz
100MHz
6ns (CL = 2, 3)
6ns (CL = 3)
Utilizes industry standard 8M X 8 Synchronous DRAMs in
TSOP package , industry standard Resistered buffer in TSSOP
package and industry standard PLL in TSSOP package
Single 3.3V +/- 0.3V supply
LVTTL Interface
Burst length 1/2/4/8/Full Page(programmable)
Burst W rite / Single W rite(programmable)
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycles every 64ms
Discrete IC and module design conform to
PC/100 specification.
(module Spec. Rev. 1.2 and SPD 1.2A)
124pin
125pin
40pin
41pin
APPLICATION
Main memory or graphic memory in computer systems
168pin
84pin
MIT-DS-0351-0.0
MITSUBISHI
ELECTRIC
30/Sep. /1999
1

MH8S72DBFD-7 Related Products

MH8S72DBFD-7 MH8S72DBFD-8
Description 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Maker Mitsubishi Mitsubishi
package instruction DIMM, DIMM168 DIMM, DIMM168
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 100 MHz 100 MHz
I/O type COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168
memory density 603979776 bit 603979776 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72
Number of functions 1 1
Number of ports 1 1
Number of terminals 168 168
word count 8388608 words 8388608 words
character code 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 8MX72 8MX72
Output characteristics 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V
Certification status Not Qualified Not Qualified
refresh cycle 4096 4096
self refresh YES YES
Maximum standby current 0.034 A 0.034 A
Maximum slew rate 1.015 mA 1.015 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
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