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MH32S64APHB-6

Description
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
Categorystorage    storage   
File Size708KB,55 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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MH32S64APHB-6 Overview

2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM

MH32S64APHB-6 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknow
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density2147483648 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.016 A
Maximum slew rate2.56 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S64APHB -6,-7,-8
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
DESCRIPTION
The MH32S64APHB is 33554432 - word by 64-bit
Synchronous DRAM module. This consists of
sixteen industry standard 16Mx8 Synchronous
DRAMs in TSOP and one industory standard
EEPROM in TSSOP.
The mounting of TSOP on a card edge Dual
Inline package provides any application where
high densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable
for easy interchange or addition of modules.
85pin
1pin
94pin
95pin
10pin
11pin
FEATURES
Frequency
-6
-7
-8
133MHz
100MHz
100MHz
CLK Access Time
(Component SDRAM)
5.4ns(CL=3)
6.0ns(CL=2)
6.0ns(CL=3)
124pin
125pin
40pin
41pin
Utilizes industry standard 16M x 8 Sy nchronous DRAMs
TSOP and industry standard EEPROM in TSSOP
168-pin (84-pin dual in-line package)
single 3.3V±0.3V power supply
Max. Clock frequency -6:133MHz,-7,8:100MHz
Fully synchronous operation referenced to clock
rising edge
4 bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable)
Burst length- 1/2/4/8/Full Page(programmable)
Burst type- sequential / interleave(programmable)
Column access - random
Auto precharge / All bank precharge controlled
by A10
Auto refresh and Self refresh
4096 refresh cycle /64ms
LVTTL Interface
Discrete IC and module design conform to
PC100/PC133 specification.
168pin
84pin
APPLICATION
PC main memory
MIT-DS-0379-0.1
MITSUBISHI
ELECTRIC
( 1 / 55 )
17.Mar.2000

MH32S64APHB-6 Related Products

MH32S64APHB-6 MH32S64APHB-8 MH32S64APHB-7
Description 2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
Maker Mitsubishi Mitsubishi Mitsubishi
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST FOUR BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 5.4 ns 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 100 MHz 100 MHz
I/O type COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 2147483648 bi 2147483648 bi 2147483648 bi
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64 64
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 168 168 168
word count 33554432 words 33554432 words 33554432 words
character code 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 32MX64 32MX64 32MX64
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096
self refresh YES YES YES
Maximum standby current 0.016 A 0.016 A 0.016 A
Maximum slew rate 2.56 mA 2.56 mA 2.56 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Parts packaging code DIMM - DIMM
Contacts 168 - 168
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