MH16S64PHB-6 datasheet, PDF - EEWORLD Datasheet

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MH16S64PHB-6: Description1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM; Categorystorage storage; File Size644KB，40 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH16S64PHB-6 Overview

1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

MH16S64PHB-6 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	2
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum standby current	0.008 A
Maximum slew rate	1.6 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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MITSUBISHI LSIs

MH16S64PHB-6

1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

PRELIMINARY

Some of contents are subject to change without notice.

DESCRIPTION

The MH16S64PHB is 16777216 - word x 64-bit Synchronous

DRAM module. This consist of eight industry standard 16M

x 8 Synchronous DRAMs in TSOP.

The TSOP on a card edge dual in-line package provides any

application where high densities and large of quantities

memory are required.

This is a socket-type memory module ,suitable for easy

interchange or addition of module.

85pin

1pin

FEATURES

Type name

Max.

Frequency

Access Time from CLK

[component level]

94pin

95pin

10pin

11pin

MH16S64PHB-6

133MHz

5.4ns

(CL = 3)

Utilizes industry standard 16M X 8 Synchronous DRAMs in TSOP

package

Single 3.3V +/- 0.3V supply

Max.Clock frequency 133MHz

Fully synchronous operation referenced to clock rising edge

4-bank operation controlled by BA0,BA1(Bank Address)

/CAS latency -2/3(programmable,at buffer mode)

LVTTL Interface

Burst length 1/2/4/8/Full Page(programmable)

Burst type- Sequential and interleave burst (programmable)

Random column access

Burst Write / Single Write(programmable)

Auto precharge / All bank precharge controlled by A10

Auto refresh and Self refresh

4096 refresh cycles every 64ms

124pin

125pin

40pin

41pin

APPLICATION

Main memory or graphic memory in computer systems

168pin

84pin

MIT-DS-0321-0.0

MITSUBISHI

ELECTRIC

12/May. /1999

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