MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGP7N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
•
•
•
•
•
•
Industry Standard TO–220 Package
High Speed: Eoff = 60
m
J/A typical at 125°C
High Voltage Short Circuit Capability – 10
m
s minimum at 125°C, 400 V
Low On–Voltage 2.0 V typical at 5.0 A, 125°C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
™
Data Sheet
MGP7N60E
IGBT IN TO–220
9.0 A @ 90°C
10 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
C
G
C
G
E
CASE 221A–09
TO–220AB
E
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current
— Continuous @ TC = 90°C
Collector Current
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20
Ω)
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
VCES
VCGR
VGE
IC25
IC90
ICM
PD
TJ, Tstg
tsc
R
θJC
R
θJA
TL
Value
600
600
±
20
10
7.0
14
81
0.65
– 55 to 150
10
1.5
65
260
10 lbf
S
in (1.13 N
S
m)
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
m
s
°C/W
°C
Designer’s is a trademark of Motorola, Inc.
©
Motorola IGBT Device
Motorola, Inc. 1997
Data
1
MGP7N60E
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
µAdc)
Temperature Coefficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 2.5 Adc)
(VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 5 0 Adc
Vdc
5.0 Adc,
VGE = 15 Vdc)
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
LE
—
7.5
—
nH
(VCC = 360 Vdc, IC = 5 0 Ad
Vd
5.0 Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
H,
RG = 20
Ω,
TJ = 125°C)
125 C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 5 0 Ad
Vd
5.0 Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
H,
RG = 20
Ω,
TJ = 25 C)
25°C)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
—
—
—
—
—
—
—
—
—
—
—
—
—
22
24
64
196
0.20
31
24
195
220
0.38
27.2
7.0
13.7
—
—
—
—
0.34
—
—
—
—
—
—
—
—
mJ
nC
mJ
ns
ns
(VCE = 25 Vdc, VGE = 0 Vdc,
Vdc
Vdc
f = 1.0 MHz)
Cies
Coes
Cres
—
—
—
610
60
10
—
—
—
pF
VCE(on)
—
—
—
VGE(th)
4.0
—
gfe
—
6.0
10
2.5
8.0
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
mV/°C
Mhos
Vdc
V(BR)CES
600
—
V(BR)ECS
ICES
—
—
IGES
—
—
—
—
10
200
50
15
—
870
—
—
—
—
Vdc
mV/°C
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
m
Adc
2
Motorola IGBT Device Data
MGP7N60E
20
20 V
IC , COLLECTOR CURRENT (AMPS)
TJ = 25°C
15
12.5 V
10
17.5 V
IC , COLLECTOR CURRENT (AMPS)
15 V
20
20 V
TJ = 125°C
15
12.5 V
10
17.5 V
15 V
5
VGE = 10 V
5
VGE = 10 V
0
0
1
2
3
4
5
6
7
8
VCE(on), COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
VCE(on), COLLECTOR–TO–EMITTER ON–STATE
VOLTAGE (VOLTS)
12
IC , COLLECTOR CURRENT (AMPS)
10
8
6
TJ = 125°C
4
2
0
5
6
7
8
9
10
11
12
13
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
25°C
VCE = 100 V
5
m
S PULSE WIDTH
2.2
IC = 5.0 A
2.0
1.8
1.6
1.4
1.2
1.0
–50
–25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
VGE = 15 V
80
m
S PULSE WIDTH
3.75 A
2.5 A
Figure 3. Transfer Characteristics
Figure 4. VCE versus Junction Temperature
1000
C, CAPACITANCE (pF)
800
600
400
Coes
200
Cres
0
0
5
10
15
Cies
VGE = 0 V
TJ = 25°C
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
1200
20
16
QT
12
Q1
Q2
8
TJ = 25°C
IC = 5.0 A
4
0
0
5
10
15
20
25
20
25
30
35
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. VGE versus Total Charge
Motorola IGBT Device Data
3
MGP7N60E
0.5
Eoff , TURN–OFF ENERGY LOSSES (mJ)
Eoff , TURN–OFF ENERGY LOSSES (mJ)
VCC = 360 V
VGE = 15 V
TJ = 125°C
0.5
VCC = 360 V
VGE = 15 V
RG = 20
W
0.4
IC = 5.0 A
0.4
IC = 5.0 A
0.3
3.75 A
0.3
3.75 A
0.2
2.5 A
0.1
0
0.2
2.5 A
0.1
0
10
15
20
25
30
35
40
45
50
GATE RESISTANCE (
W
)
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Turn–Off Losses versus Gate
Resistance
Figure 8. Turn–Off Losses versus Junction
Temperature
0.6
Eoff , TURN–OFF ENERGY LOSSES (mJ)
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
VCC = 360 V
VGE = 15 V
RG = 20
W
TJ = 125°C
100
10
VGE = 15 V
RGE = 20
W
TJ = 125°C
1
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 9. Turn–Off Energy Losses versus
Collector Current
Figure 10. Reverse Biased Safe Operating
Area
4
Motorola IGBT Device Data
MGP7N60E
PACKAGE DIMENSIONS
–T–
B
4
SEATING
PLANE
F
T
S
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 9:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
GATE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–09
TO–220AB
ISSUE Z
Motorola IGBT Device Data
5
Power technology
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