MDD 310
High Power
Diode Modules
V
RSM
V
1300
1500
1700
1900
2100
2300
Symbol
I
FRMS
I
FAVM
I
FSM
V
RRM
V
1200
1400
1600
1800
2000
2200
Type
MDD 310-12N1
MDD 310-14N1
MDD 310-16N1
MDD 310-18N1
MDD 310-20N1
MDD 310-22N1
Maximum Ratings
480
305
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
11,5
12,2
9,6
10,2
662
620
460
430
-40...+150
150
-40...+125
50/60 Hz, RMS
I
ISOL
< 1 mA
t = 1 min
t=1s
3000
3600
2.5 - 5
12 - 15
320
A
A
kA
kA
kA
kA
kA
2
s
kA
2
s
kA
2
s
kA
2
s
°C
°C
°C
V~
V~
Nm
Nm
g
3
1
2
I
FRSM
=
2x 480 A
I
FAVM
=
2x 305 A
V
RRM
= 1200-2200 V
E72873
Conditions
T
VJ
= T
VJM
T
C
= 100°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Features
• Direct copper bonded Al
2
O
3
ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
I
2
t
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
RRM
V
F
V
T0
r
t
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
Conditions
V
R
= V
RRM
;
I
F
= 600 A;
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristics Values
40
1.2
0.75
0.63
0.129
0.065
0.169
0.0845
760
275
12.7
9.6
50
mA
V
V
mW
K/W
K/W
K/W
K/W
µC
A
mm
mm
m/s
2
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
other values
see Fig. 6/7
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20150910a
© 2015 IXYS All rights reserved
1-4
MDD 310
Dimensions in mm (1 mm = 0.0394“)
42.5
M8x16
hex
SW13
35
28.5
0.25
65 x 57
116
max. 12.4
80
6
5.5
4567
4.5
Threaded spacer for higher Anode /
Cathode construction:
Type
ZY 250
(material brass)
IXYS reserves the right to change limits, test conditions and dimensions.
38
60
32
20150910a
© 2015 IXYS All rights reserved
2-4
MDD 310
14000
12000
10000
50
Hz
80
% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
10
6
V
R
= 0 V
500
400
DC
180° sin
120°
60°
30°
I
FS M
[A ]
8000
6000
4000
2000
0
0.001
I
2
t
[A s ]
2
T
VJ
= 45°C
I
FA V M
[A ]
T
VJ
= 150°C
300
200
100
0.01
0.1
1
10
5
1
10
0
0
25
50
75
100 125 150
t [s ]
Fig. 1
Surge
overload
current
I
FSM
: Crest
value,
t:
duration
500
2
t [m s ]
Fig. 2 I t versus time
(1-10
ms)
T
C
[°C ]
Fig. 3 Maximum
forward current
at case
temperature
R
thKA
K/W
400
P
to t
[W ]
300
DC
180
° sin
120 °
60
°
30 °
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
200
100
0
0
100
200
300
400
0
25
50
75
100
125
150
I
F A V M
[A ]
Fig. 4
Power
dissipation
versus forward
current
and
ambient
temperature
(per
diode)
1600
R
L
T
A
[°C ]
R
thKA
K/W
1200
P to t
[W ]
800
Circuit
B2
2x MDD310
0.06
0.08
0.10
0.15
0.20
0.30
0.40
0.50
400
0
0
200
400
600
0
25
50
75
100
125
150
I
d A V M
[A ]
T
A
[°C ]
Fig. 5 Single
phase
rectifier
bridge: Power
dissipation vs. direct output
current
and ambient temperature
R = resistive load, L = inductive load
IXYS reserves the right to change limits, test conditions and dimensions.
20150910a
© 2015 IXYS All rights reserved
3-4
MDD 310
2500
R
thKA
K/W
2000
1500
0.03
0.05
0.06
0.08
0.12
0.15
0.2
0.3
Circuit
B6
3x MDD310
1000
500
0
0
200
400
600
800 0
25
50
75
100
125
150
Fig.6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
0.14
0.12
0.10
30°
DC
R
thJC
for various conduction angles d
:
d
DC
180°
120°
60°
30°
R
thJC
[K/W]
0.129
0.131
0.132
0.132
0.133
Z
thJC
0.08
[K/W]
0.06
0.04
0.02
0.00
10
-3
Constants for Z
thJC
calculation:
t
i
[s]
i R
thi
[K/W]
1 0.0035
0.0099
2 0.0165
0.168
3 01091
0.456
10
-2
10
-1
10
0
10
1
t [s]
Fig. 7 Transient thermal impedance junction to case (per diode)
0.20
30°
R
thJK
for various conduction angles d:
DC
0.16
Z
thJK
0.12
[K/W]
0.08
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.169
0.171
0.172
0.172
0.173
Constants for Z
thJK
calculation:
i R
thi
(K/W) t
i
(s)
1 0.0035
0.0099
2 0.0165
0.168
3 0.1091
0.456
4 0.04
1.36
0.04
0.00
10
-3
10
-2
10
-1
10
0
10
1
t [s]
Fig. 8 Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
20150910a
© 2015 IXYS All rights reserved
4-4
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