Rev 3: June 2004
AO4408, AO4408L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4408 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and fast
switching. This device makes an excellent high side
switch for notebook CPU core DC-DC conversion.
AO4408L(Green Product) is offered in a lead-free
package.
Features
V
DS
(V) = 30V
I
D
= 12A
R
DS(ON)
< 13mΩ (V
GS
= 10V)
R
DS(ON)
< 16mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
Avalanche Current
B
B,E
B,E
Maximum
30
±12
12
10
80
30
100
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°C
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AV
L=0.1mH
E
AV
P
D
T
J
, T
STG
T
A
=25°C
Repetitive Avalanche Energy
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
23
48
12
Max
40
65
16
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=12A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=10A
Forward Transconductance
V
DS
=5V, I
D
=10A
30
Diode Forward Voltage
I
S
=10A,V
GS
=0V
Maximum Body-Diode Continuous Current
T
J
=125°C
1
40
10.5
16
13
48
0.76
1
4.5
1020
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
320
80
0.25
10.3
V
GS
=4.5V, V
DS
=15V, I
D
=12A
2.1
3.9
3.9
V
GS
=10V, V
DS
=15V, R
L
=1.2Ω,
R
GEN
=3Ω
I
F
=12A, dI/dt=100A/µs
3
19.2
2.6
26
18
5.5
6
30
5
32
32
0.5
12.5
1200
14
21
16.5
1.5
Min
30
0.003
1
5
100
2.5
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
100
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40
30
I
D
(A)
20
10
V
GS
=2.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
5
25°C
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
4.5V
3.5V
25
3V
20
15
125°C
10
V
DS
=5V
30
I
D
(A)
16
Normalized On-Resistance
1.8
I
D
=10A
1.6
V
GS
=4.5V
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=10V
14
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
12
10
V
GS
=10V
8
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
I
D
=10A
30
1.0E+01
V
GS
=0V
1.0E+00
125°C
100
1.0E-01
R
DS(ON)
(m
Ω
)
125°C
20
I
S
(A)
1.0E-02
25°C
1.0E-03
10
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
0.0
0.4
0.6
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.2
1.0
0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
Capacitance (pF)
V
GS
(Volts)
3
2
1
0
0
2
4
6
8
10
12
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1500
V
DS
=15V
I
D
=12A
1250
1000
750
500
250
C
oss
C
iss
C
rss
100.0
R
DS(ON)
limited
10.0
I
D
(Amps)
10µs
1ms
10ms
0.1s
1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10s
DC
100µs
Power (W)
50
40
30
20
10
0
0.001
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
100
1
0.1
Single Pulse
0.01
0.00001
P
D
T
on
T
100
1000
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
I
D
(A), Peak Avalanche Current
60
50
40
30
20
10
0
0.00001
T
A
=25°C
Power Dissipation (W)
3
4
t
A
=
L
⋅
I
D
BV
−
V
DD
2
10s
1
Steady-
State
0
0.0001
Time in avalanche, t
A
(s)
Figure 12: Avalanche capability
0.001
25
75
100
125
T
CASE
(°C)
Figure 13: Power De-rating (Note A)
50
150
Alpha & Omega Semiconductor, Ltd.
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