Rev 1: Oct 2004
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO8701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
Features
V
DS
(V) = -30V
I
D
= -4.2A
R
DS(ON)
< 50mΩ (V
GS
= 10V)
R
DS(ON)
< 65mΩ (V
GS
= 4.5V)
R
DS(ON)
< 120mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
D
K
D
S
S
G
1
2
3
4
8
7
6
5
K
A
A
A
G
S
A
TSSOP-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
-30
±12
-4.2
-3.5
-30
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
1.4
1
-55 to 150
Typ
73
96
63
75
97
63
30
3
2
40
1.4
1
-55 to 150
Max
90
125
75
90
125
75
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
°C/W
Alpha & Omega Semiconductor, Ltd.
AO8701, AO8701L
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-4.2A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=-5V, I
D
=-5A
7
I
S
=-1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
54
82
11
-0.75
-1
-2.2
954
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
115
77
6.1
9.4
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
2
3
6.3
V
GS
=-10V, V
DS
=-15V, R
L
=3.6Ω,
R
GEN
=6Ω
I
F
=-4A, dI/dt=100A/µs
3.2
38.2
12
20.2
11.2
0.45
0.007
3.2
12
37
0.5
0.05
10
20
pF
mA
-0.7
-25
43
50
75
65
120
-1
Min
-30
-1
-5
±100
-1.3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-4A, dI/dt=100A/µs
I
F
=1.0A
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
R
=15V
2
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
I
rm
C
T
Maximum reverse leakage current
Junction Capacitance
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8701, AO8701L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
120
100
R
DS(ON)
(m
Ω
)
80
60
40
V
GS
=-10V
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
R
DS(ON)
(m
Ω
)
130
110
90
70
50
30
25°C
125°C
-I
S
(A)
I
D
=-2A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
125°C
V
GS
=-4.5V
Normalized On-Resistance
1.6
-2.5V
-4.5V
-3V
-I
D
(A)
6
-I
D
(A)
4
2
0
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
10
V
DS
=-5V
8
V
GS
=-2V
25°C
V
GS
=-2.5V
1.4
I
D
=-5A
V
GS
=-4.5V
V
GS
=-10V
1.2
V
GS
=-2.5V
I
D
=-2A
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E-06
10
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
-V
SD
(Volts)
-V
USES OF
OUT OF SUCH APPLICATIONS OR
GS
(Volts)
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs.
NOTICE.
FUNCTIONS AND RELIABILITY WITHOUT
Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO8701, AO8701L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
200
0
0
2
4
6
8
10
12
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
1400
V
DS
=-15V
I
D
=-4A
Capacitance (pF)
1200
1000
800
600
400
C
oss
C
rss
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
0.1s
100µs
1ms
10ms
10µs
Power (W)
40
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10.0
30
20
1.0
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.00001
0.0001
0.001
0.01
10
1000
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT 0.1
AUTHORIZED.1
AOS DOES NOT ASSUME100 LIABILITY ARISING
ANY
Pulse Width (s)
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Figure 11: Normalized Maximum Transient Thermal Impedance
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8701,AO8701L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
Capacitance (pF)
250
f = 1MHz
1
I
F
(Amps)
200
150
100
50
25°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
0
0
5
10
15
20
25
30
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
0.1
0.01
0.7
Leakage Current (mA)
0.6
0.5
0.4
I
F
=1A
0.3
0.2
0.1
0
25
50
75
100
125
Temperature (°C)
150
175
100
I
F
=3A
10
1
V
R
=30V
0.1
0.01
0.001
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
V
F
(Volts)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
京公网安备 11010802033920号
EEWORLD
