AT49F8011-70TI datasheet, PDF - EEWORLD Datasheet

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AT49F8011-70TI: Description8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory; Categorystorage storage; File Size165KB，20 Pages; ManufacturerAtmel (Microchip)

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AT49F8011-70TI Overview

8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory

AT49F8011-70TI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	70 ns
Other features	CONFIGURABLE AS 512K X 16
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
JESD-609 code	e0
length	18.4 mm
memory density	8388608 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	2,4,2,14
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.00001 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	12 mm
Base Number Matches	1

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Features

•

4.5V to 5.5V Read/Write

•

Access Time - 70 ns

•

Sector Erase Architecture

– Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout

– Two 16K Word (32K Byte) Sectors with Individual Write Lockout

– Two 8K Word (16K Byte) Sectors with Individual Write Lockout

– Four 4K Word (8K Byte) Sectors with Individual Write Lockout

Fast Word Program Time - 10 µs

Fast Sector Erase Time - 200 ms

Dual Plane Organization, Permitting Concurrent Read while Program/Erase

– Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors

– Memory Plane B: Fourteen 32K Word Sectors

Erase Suspend Capability

– Supports Reading/Programming Data from Any Sector by Suspending Erase of

Any Different Sector

Low-power Operation

– 40 mA Active

– 10 µA Standby

Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

RESET Input for Device Initialization

Sector Program Unlock Command

TSOP and CBGA Package Options

Top or Bottom Boot Block Configuration Available

•

8-megabit

(512K x 16/

1M x 8)

5-volt Only

Flash Memory

AT49F8011

AT49F8011T

Not Recommended

for New Designs

Description

The AT49F8011(T) is a 5.0 volt 8-megabit Flash memory organized as 524,288 words

of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 -

I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for

erase operations. The device is offered in 48-pin TSOP and 48-ball CBGA packages.

The device has CE, and OE control signals to avoid any bus contention. This device

can be read or reprogrammed using a single 5.0V power supply, making it ideally

suited for in-system programming.

Pin Configurations

Pin Name

A0 - A18

RESET

RDY/BUSY

I/O0 - I/O14

I/O15 (A-1)

BYTE

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

READY/BUSY Output

Data Inputs/Outputs

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

Selects Byte or Word Mode

No Connect

Don’t Connect

1264D–FLASH–5/03

ERASURE:

Before a byte/word can be reprogrammed, it must be erased. The erased state of

memory bits is a logical “1”. The entire device can be erased by using the Chip Erase com-

mand or individual sectors can be erased by using the Sector Erase commands.

CHIP ERASE:

The entire device can be erased at one time by using the 6-byte chip erase

software code. After the chip erase has been initiated, the device will internally time the erase

operation so that no external clocks are required. The maximum time to erase the chip is t

If the sector lockout has been enabled, the Chip Erase will not erase the data in the sector that

has been locked; it will erase only the unprotected sectors. After the chip erase, the device will

return to the read or standby mode.

SECTOR ERASE:

As an alternative to a full chip erase, the device is organized into 22 sec-

tors that can be individually erased. The Sector Erase command is a six bus cycle operation.

The sector address is latched on the falling WE edge of the sixth cycle while the 30H data

input command is latched on the rising edge of WE. The sector erase starts after the rising

edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically

time to completion. The maximum time to erase a section is t

SEC

. When the sector program-

ming lockout feature is not enabled, the sector will erase (from the same sector erase

command). Once a sector has been protected, data in the protected sectors cannot be

changed unless the RESET pin is taken to 12V ± 0.5V. An attempt to erase a sector that has

been protected will result in the operation terminating in 2 µs.

BYTE/WORD PROGRAMMING:

Once a memory block is erased, it is programmed (to a logi-

cal “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the

internal device command register and is a 4-bus cycle operation. The device will automatically

generate the required internal program pulses.

Any commands written to the chip during the embedded programming cycle will be ignored. If

a hardware reset happens during programming, the data at the location being programmed

will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase

operations can convert “0”s to “1”s. Programming is completed after the specified t

cycle

time. The DATA polling feature or the toggle bit feature may be used to indicate the end of a

program cycle.

SECTOR PROGRAMMING LOCKOUT:

Each sector has a programming lockout feature. This

feature prevents programming of data in the designated sectors once the feature has been

enabled. These sectors can contain secure code that is used to bring up the system. Enabling

the lockout feature will allow the boot code to stay in the device while data in the rest of the

device is updated. This feature does not have to be activated; any sector’s usage as a write

protected region is optional to the user.

Once the feature is enabled, the data in the protected sectors can no longer be erased or pro-

grammed when input levels of 5.5V or less are used. Data in the remaining sectors can still be

changed through the regular programming method. To activate the lockout feature, a series of

six program commands to specific addresses with specific data must be performed. Please

refer to the Command Definitions table.

SECTOR LOCKOUT DETECTION:

A software method is available to determine if program-

ming of a sector is locked out. When the device is in the software product identification mode

(see Software product Identification Entry and Exit sections) a read from address location

00002H within a sector will show if programming the sector is locked out. If the data on I/O0 is

low, the sector can be programmed; if the data on I/O0 is high, the program lockout feature

has been enabled and the sector cannot be programmed. The software product identification

exit code should be used to return to standard operation.

SECTOR PROGRAMMING LOCKOUT OVERRIDE:

The user can override the sector pro-

gramming lockout by taking the RESET pin to 12V ± 0.5V. By doing this protected data can be

altered through a chip erase, sector erase or byte/word programming. When the RESET pin is

brought back to TTL levels the sector programming lockout feature is again active.

AT49F8011(T)

1264D–FLASH–5/03

AT49F8011(T)

ERASE SUSPEND/ERASE RESUME:

The erase suspend command allows the system to

interrupt a sector erase operation and then program or read data from a different sector within

the same plane. Since this device has a dual plane architecture, there is no need to use the

erase suspend feature while erasing a sector when you want to read data from a sector in the

other plane. After the erase suspend command is given, the device requires a maximum time

of 15 µs to suspend the erase operation. After the erase operation has been suspended, the

plane which contains the suspended sector enters the erase-suspend-read mode. The system

can then read data or program data to any other sector within the device. An address is not

required during the erase suspend command. During a sector erase suspend, another sector

cannot be erased. To resume the sector erase operation, the system must write the erase

resume command. The erase resume command is a one bus cycle command that does

require the plane address which is determined by A18 - A16. The device also supports an

erase suspend during a complete chip erase. While the chip erase is suspended, the user can

read from any sector within the memory that is protected. The command sequence for a chip

erase suspend and a sector erase suspend are the same.

PRODUCT IDENTIFICATION:

The product identification mode identifies the device and man-

ufacturer as Atmel. It may be accessed by hardware or software operation. The hardware

operation mode can be used by an external programmer to identify the correct programming

algorithm for the Atmel product.

For details, see Operating Modes (for hardware operation) or Software Product Identification.

The manufacturer and device code is the same for both modes.

DATA POLLING:

The AT49F8011(T) features DATA polling to indicate the end of a program

cycle. During a program cycle an attempted read of the last byte/word loaded will result in the

complement of the loaded data on I/O7. Once the program cycle has been completed, true

data is valid on all outputs and the next cycle may begin. During a chip or sector erase opera-

tion, an attempt to read the device will give a “0” on I/O7. Once the program or erase cycle has

completed, true data will be read from the device. DATA polling may begin at any time during

the program cycle. Please see “Status Bit Table” for more details.

TOGGLE BIT:

In addition to DATA polling the AT49F8011(T) provides another method for

determining the end of a program or erase cycle. During a program or erase operation, suc-

cessive attempts to read data from the same memory plane will result in I/O6 toggling between

one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data

will be read. Examining the toggle bit may begin at any time during a program cycle.

An additional toggle bit is available on I/O2 which can be used in conjunction with the toggle

bit which i s avai lable on I/O6. W hile a s ector i s eras e sus pended, a read or a

program operation from the suspended sector will result in the I/O2 bit toggling. Please see

“Status Bit Table” for more details.

RDY/BUSY:

An open drain READY/BUSY output pin provides another method of detecting

the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal

program and erase cycles and is released at the completion of the cycle. The open drain con-

nection allows for OR-tying of several devices to the same RDY/BUSY line.

HARDWARE DATA PROTECTION:

Hardware features protect against inadvertent programs

to the AT49F8011(T) in the following ways: (a) V

sense: if V

is below 3.8V (typical), the

program function is inhibited. (b) V

power on delay: once V

has reached the V

sense

level, the device will automatically time out 10 ms (typical) before programming. (c) Program

inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter:

pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.

INPUT LEVELS:

While operating with a 4.5V to 5.5V power supply, the address inputs and

control inputs (OE, CE, and WE) may be driven from 0 to 5.5V without adversely affecting the

operation of the device. The I/O lines can only be driven from 0 to V

+ 0.6V.

1264D–FLASH–5/03

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