MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM32A732/D
Advance Information
128KB/256KB Secondary Cache
Module
With Tag, Valid, and Dirty for i486
Processor Systems
This family of cache modules is well suited to provide the secondary cache for
the Intel 82420 PCI chipset. This family provides the 128K Byte and 256K Byte
cache sizes with valid, dirty and a choice of 7, 8, or 9 tag bits. The tag/valid bits
have 12 ns access times for zero wait states at 33 MHz clock speeds. The PD
pins map into the configuration register of the 82420 for auto–configuration of the
cache controller during system startup.
•
Low Profile Edge Connector: Burndy Part Number: CELP2X56SC3Z48
•
Single 5 V
±
10% Power Supply
•
All Inputs and Outputs are TTL Compatible
•
Three State Outputs
•
Fast Module Cycle Time: Up to External Processor Bus Speed of 33 MHz
•
Cache Byte Write, Bank Chip Enable, Bank Output Enable
•
Decoupling Capacitors are Used for Each Fast Static RAM
•
High Quality Multi–Layer FR4 PWB With Separate Power and Ground Planes
MCM32A732
MCM32A832
MCM32A932
MCM32A764
MCM32A864
MCM32A964
112–LEAD
CARD EDGE
CASE 1112–01
TOP VIEW
1
45
46
56
BurstRAM is a registered trademark of Motorola.
I486 is a registered trademark Intel Corp.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 1
6/95
©
Motorola, Inc. 1994
MOTOROLA FAST SRAM
MCM32A732/764•MCM32A832/864•MCM32A932/964
1
PIN ASSIGNMENT
CACHE MODULE
112–LEAD CARDEDGE
TOP VIEW
VSS
DQ0
DQ2
DQ4
DQ6
VCC
NC
DQ8
DQ10
DQ12
VSS
DQ14
DQ16
DQ18
DQ20
VCC
DQ22
NC
DQ24
DQ26
VSS
DQ28
DQ30
LA2
LA3
VCC
A4
A6
A8
A10
A12
A14
A16
NC
VSS
DIRTYD
TDQ0
TDQ2
TDQ4
VSS
TDQ6
VALID
TE
TWE
VCC
VSS
TG
DIRTYWE
DIRTYE
VCC
G0
E0
PD0
PD2
PD4
VSS
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
VSS
DQ1
DQ3
DQ5
DQ7
VCC
NC
DQ9
DQ11
DQ13
VSS
DQ15
DQ17
DQ19
DQ21
VCC
DQ23
NC
DQ25
DQ27
VSS
DQ29
DQ31
HA2
HA3
VCC
A5
A7
A9
A11
A13
A15
NC
NC
VSS
DIRTYQ
TDQ1
TDQ3
TDQ5
VSS
TDQ7*
TDQ8**
ALE
WE0
VCC
VSS
WE1
WE2
WE3
VCC
G1
E1
PD1
PD3
NC
VSS
PD4
NC
VCC
VCC
VCC
VCC
VCC
VCC
PD3
NC
VCC
NC
NC
VCC
NC
NC
PD2
NC
NC
NC
VCC
NC
NC
VCC
PD1
NC
NC
NC
NC
VCC
VCC
VCC
PD0
NC
VCC
VCC
VCC
NC
NC
NC
Cache
Size
—
128KB
128KB
128KB
256KB
256KB
256KB
Main
Memory
Max
—
16MB
32MB
64MB
32MB
64MB
128MB
Module
No Module
32A732
32A832
32A932
32A764
32A864
32A964
PIN NAMES
A4 – A19 . . . . . . . . . . . . . . . . . . . . . . Address Inputs
HCA2, HCA3 . . . . . . . Upper Bank Address Inputs
LCA2, LCA3 . . . . . . . . Lower Bank Address Inputs
ALE . . . . . . . . . . . . . . . . . . . . Address Latch Enable
Wx . . . . . . . . . . . . . . . . . . . . . . . . Byte Write Enable
E0, E1 . . . . . . . . . . . . . . . . . . . . . Bank Chip Enable
G0, G1 . . . . . . . . . . . . . . . . . . . Bank Output Enable
DQ0 – DQ31 . . . . . . . . . . Cache Data Input/Output
TDQ0 – TDQ8 . . . . . . . . . . . Tag Data Input/Output
TWE . . . . . . . . . . . . . . . . . . . . . . . . Tag Write Enable
TG . . . . . . . . . . . . . . . . . . . . . . . . Tag Output Enable
TE . . . . . . . . . . . . . . . . . . . . . . . . . . Tag Chip Enable
VALID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Valid Bit
DIRTYWE . . . . . . . . . . . . . . . . . . Dirty Write Enable
DIRTYE . . . . . . . . . . . . . . . . . . . . . Dirty Chip Enable
DIRTYD . . . . . . . . . . . . . . . . . . . . . . Dirty Data Input
DIRTYQ . . . . . . . . . . . . . . . . . . . . . Dirty Data Output
PD0 – PD4 . . . . . . . . . . . . . . . . . . Presence Detect
NC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . No Connect
VCC . . . . . . . . . . . . . . . . . . . . . . +5 V Power Supply
VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ground
* No Connect for 32A864, 32A832
** No Connect for 32A764, 32A864, 32A732, 32A832
MCM32A732/764•MCM32A832/864•MCM32A932/964
2
MOTOROLA FAST SRAM
486 256KB CACHE MODULE BLOCK DIAGRAM
WITH 9 TAG BITS
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
W0
E
E
W1
E
E
W2
E
E
W3
E
E0
G0
LCA3
LCA2
DQ0 – DQ7
DQ8 – DQ15
DQ16 – DQ23
DQ24 – DQ31
DIRTYQ
DIRTYD
DIRTYWE
ALE
A4 – A17
TDQ0 – TDQ8
VALID
TWE
14
8
8
8
8
E
E1
G1
HCA3
HCA2
A0 – A13
16K x 1
Dout
Din
W
74F373
A0 – A13
DQ0 – DQ8
DQ9
16K x 10
W
DIRTYE
TE
TG
MOTOROLA FAST SRAM
MCM32A732/764•MCM32A832/864•MCM32A932/964
3
486 128KB CACHE MODULE BLOCK DIAGRAM
WITH 9 TAG BITS
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
32K x 8
A2 – A14
DQ0 – DQ7
W
A0
A1
G
W0
E
W1
E
W2
E
W3
NC
NC
NC
NC
E1
G1
HCA3
HCA2
E
E0
G0
LCA3
LCA2
DQ0 – DQ7
DQ8 – DQ15
DQ16 – DQ23
DQ24 – DQ31
DIRTYQ
DIRTYD
DIRTYWE
ALE
A4 – A17
TDQ0 – TDQ8
VALID
TWE
A0 – A12
8K x 1
Dout
Din
W
74F373
A0 – A12
DQ0 – DQ8
DQ9
8K x 10
W
DIRTYE
TE
TG
MCM32A732/764•MCM32A832/864•MCM32A932/964
4
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E
H
L
L
L
G
X
H
L
X
W
X
H
H
L
Mode
Not Selected
Output Disabled
Read
Write
VCC Current
ISB1, ISB2
ICCA
ICCA
ICCA
Output
High–Z
High–Z
Dout
High–Z
Cycle
–
–
Read Cycle
Write Cycle
NOTE: E = Exx, ET; W = Wxx, WT, WA; G = GA, GB
ABSOLUTE MAXIMUM RATINGS
Rating
Power Supply Voltage
Voltage Relative to VSS For Any Pin
Except VCC
Output Current
Power Dissipation
Temperature Under Bias
Operating Temperature
Storage Temperature — Plastic
Symbol
VCC
Vin, Vout
Iout
PD
Tbias
TA
Value
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
±
20
11.0
– 10 to + 85
0 to + 70
Unit
V
V
mA
W
°C
°C
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for ex-
tended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±10%,
TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
Symbol
VCC
VIH
VIL
Min
4.5
2.2
– 0.5
*
Typ
5.0
—
—
Max
5.5
VCC + 0.3
**
0.8
Unit
V
V
V
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
20 ns)
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width
≤
20 ns)
DC CHARACTERISTICS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH or G = VIH, Vout = 0 to VCC)
Output High Voltage (IOH = – 4.0 mA)
Output Low Voltage (IOL = 8.0 mA)
Symbol
Ilkg(I)
Ilkg(O)
VOH
VOL
Min
—
—
2.4
—
Max
±
10
±
10
—
0.4
Unit
µA
µA
V
V
POWER SUPPLY CURRENTS
Parameter
AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax)
AC Standby Current (E = VIH, VCC = Max, f = fmax)
CMOS Standby Current (VCC = Max, f = 0 MHz, E
≥
VCC – 0.2 V
Vin
≤
VSS + 0.2 V, or
≥
VCC – 0.2 V)
Symbol
ICCA
ISB1
ISB2
32Ax32
33 MHz
750
180
120
32Ax64
33 MHz
1250
300
200
Unit
mA
mA
mA
MOTOROLA FAST SRAM
MCM32A732/764•MCM32A832/864•MCM32A932/964
5