MCC 310
MCD 310
Thyristor Modules
Thyristor/Diode Modules
I
TRMS
= 2x 500 A
I
TAVM
= 2x 320 A
V
RRM
= 800-2200 V
3
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
1
2
76
5
4
Version 1
MCC 310-08io1
MCC 310-12io1
MCC 310-14io1
MCC 310-16io1
MCC 310-18io1
Version 1
MCD 310-08io1
MCD 310-12io1
MCD 310-14io1
MCD 310-16io1
MCD 310-18io1
3
6 7 1
5 4 2
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
500
320
9200
9800
8000
8600
420 000
400 000
320 000
306 000
100
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/ms
MCC
3
1
5 4 2
MCD
òi
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 960 A
f =50 Hz, t
P
=200
ms
V
D
= 2/3 V
DRM
I
G
= 1 A
non repetitive, I
T
= 320 A
di
G
/dt = 1 A/ms
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
¥;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30
ms
t
P
= 500
ms
500
1000
120
60
20
10
-40...+140
140
-40...+125
A/ms
V/ms
W
W
W
V
°C
°C
°C
V~
V~
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
q
q
q
q
q
q
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
q
q
q
q
q
50/60 Hz, RMS
I
ISOL
£
1 mA
t = 1 min
t=1s
3000
3600
q
q
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
320
g
q
q
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
© 2000 IXYS All rights reserved
1-4
030
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
MCC 310
MCD 310
Symbol
I
RRM
I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 140°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
Characteristic Values
70
40
1.32
0.8
0.82
2
3
150
200
0.25
10
200
150
2
typ. 200
760
275
0.112
0.056
0.152
0.076
12.7
9.6
50
mA
mA
V
V
mW
V
V
mA
mA
V
mA
mA
mA
ms
ms
mC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Fig. 1 Gate trigger characteristics
T
VJ
= 25°C; t
P
= 30
ms;
V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/ms
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
¥
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 1 A; di
G
/dt = 1 A/ms
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200
ms;
-di/dt = 10 A/ms
V
R
= 100 V; dv/dt = 50 V/ms; V
D
= 2/3 V
DRM
T
VJ
= 125°C; I
T
, I
F
= 400 A, -di/dt = 50 A/ms
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type
ZY 180L
(L = Left for pin pair 4/5)
UL 758, style 1385,
Type
ZY 180R
(R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC
MCD
Threaded spacer for higher Anode/
Cathode construction:
Type
ZY 250,
material brass
20
12
14
© 2000 IXYS All rights reserved
2-4
MCC 310
MCD 310
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
òi
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
© 2000 IXYS All rights reserved
3-4
MCC 310
MCD 310
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
0.15
K/W
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
30°
DC
Z
thJC
0.10
R
thJC
for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
R
thJC
(K/W)
0.112
0.113
0.114
0.115
0.115
0.05
Constants for Z
thJC
calculation:
i
0
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
R
thi
(K/W)
0.003
0.0143
0.0947
t
i
(s)
0.099
0.168
0.456
t
1
2
3
0.20
K/W
Z
thJK
0.15
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
30°
DC
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
0.152
0.154
0.154
0.155
0.155
DC
180°C
120°C
60°C
30°C
0.10
0.05
Constants for Z
thJK
calculation:
i
0
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
R
thi
(K/W)
0.003
0.0143
0.0947
0.04
t
i
(s)
0.099
0.168
0.456
1.36
835
t
1
2
3
4
© 2000 IXYS All rights reserved
4-4
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