CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
5. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+ 0.5V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1µF; C
O
= 1µF;
C
BYP
= 0.01µF; C
POR
= 0.01µF.
SYMBOL
TEST CONDITIONS
MIN
(Note 8)
TYP
MAX
(Note 8)
UNITS
PARAMETER
DC CHARACTERISTICS
Supply Voltage
Ground Current
V
IN
Quiescent condition: I
O1
= 0µA; I
O2
= 0µA
I
DD1
I
DD2
One LDO active
Both LDO active
@ +25°C
2.3
6.5
V
25
42
0.1
1.9
1.6
2.1
1.8
32
52
1.0
2.3
2.0
+0.7
+0.8
+1.8
µA
µA
µA
V
V
%
%
%
mA
Shutdown Current
UVLO Threshold
I
DDS
V
UV+
V
UV-
Regulation Voltage Accuracy
Initial accuracy at V
IN
= V
O
+ 0.5V, I
O
= 10mA, T
J
= +25°C
V
IN
= V
O
+ 0.5V to 5.5V, I
O
= 10µA to 300mA, T
J
= +25°C
V
IN
= V
O
+ 0.5V to 5.5V, I
O
= 10µA to 300mA,
T
J
= -40°C to +125°C
-0.7
-0.8
-1.8
300
350
475
300
250
200
145
110
Maximum Output Current
Internal Current Limit
Dropout Voltage (Note 7)
I
MAX
I
LIM
V
DO1
V
DO2
V
DO3
Continuous
600
500
400
325
mA
mV
mV
mV
°C
°C
I
O
= 300mA; V
O
<
2.5V
I
O
= 300mA; 2.5V
≤
V
O
≤
2.8V
I
O
= 300mA; V
O
> 2.8V
Thermal Shutdown Temperature
T
SD+
T
SD-
AC CHARACTERISTICS
Ripple Rejection (Note 6)
I
O
= 10mA, V
IN
= 2.8V(min), V
O
= 1.8V, C
BYP
= 0.1µF
@ 1kHz
@ 10kHz
@ 100kHz
Output Noise Voltage (Note 6)
DEVICE START-UP CHARACTERISTICS
I
O
= 100µA, V
O
= 1.5V, T
A
= +25°C, C
BYP
= 0.1µF
BW = 10Hz to 100kHz
90
70
50
30
dB
dB
dB
µV
RMS
3
FN9217.4
March 11, 2008
ISL9000
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+ 0.5V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1µF; C
O
= 1µF;
C
BYP
= 0.01µF; C
POR
= 0.01µF.
(Continued)
SYMBOL
t
EN
t
SSR
TEST CONDITIONS
Time from assertion of the ENx pin to when the output
voltage reaches 95% of the VO(nom)
Slope of linear portion of LDO output voltage ramp during
start-up
MIN
(Note 8)
TYP
250
30
MAX
(Note 8)
500
60
UNITS
µs
µs/V
PARAMETER
Device Enable Time
LDO Soft-Start Ramp Rate
EN1, EN2 PIN CHARACTERISTICS
Input Low Voltage
Input High Voltage
Input Leakage Current
Pin Capacitance
V
IL
V
IH
I
IL
, I
IH
C
PIN
Informative
5
-0.3
1.4
0.5
V
IN
+
0.3
0.1
V
V
µA
pF
POR1, POR2 PIN CHARACTERISTICS
POR1, POR2 Thresholds
V
POR+
V
POR-
POR1 Delay
t
P1LH
t
P1HL
POR2 Delay
t
P2LH
t
P2HL
POR1, POR2 Pin Output Low
Voltage
POR1, POR2 Pin Internal Pull-Up
Resistance
NOTES:
6. Limits established by characterization and are not production tested.
7. VOx = 0.98*VOx(NOM); Valid for VOx greater than 1.85V.
8. Parts are 100% tested at +25°C. Temperature limits established by characterization and are not production tested.
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