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BD746C-S

Description
Bipolar Transistors - BJT 100V 40A PNP
CategoryDiscrete semiconductor    The transistor   
File Size88KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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BD746C-S Overview

Bipolar Transistors - BJT 100V 40A PNP

BD746C-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBourns
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD745 Series
115 W at 25°C Case Temperature
20 A Continuous Collector Current
25 A Peak Collector Current
Customer-Specified Selections Available
This model is currently available, but not
recommended for new designs. For more
information, see
http://bourns.com/data/
global/pdfs/TSP1203_SOT93_POM.pdf.
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD746
Collector-base voltage (I
E
= 0)
BD746A
BD746B
BD746C
BD746
Collector-emitter voltage (I
B
= 0)
BD746A
BD746B
BD746C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-50
-70
-90
-110
-45
-60
-80
-100
-5
-20
-25
-7
115
3.5
90
-65 to +150
-65 to +150
-65 to +150
260
V
A
A
A
W
W
mJ
°C
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD746C-S Related Products

BD746C-S BD745 BD745A
Description Bipolar Transistors - BJT 100V 40A PNP Bipolar Transistors - BJT 115W NPN Silicon Bipolar Transistors - BJT 115W NPN Silicon
Is it Rohs certified? conform to incompatible incompatible
Maker Bourns Bourns Bourns
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code compliant unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 20 A 20 A 20 A
Collector-emitter maximum voltage 100 V 45 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 5 5 5
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON
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