(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
, T
J
Value
60
Unit
V
2.0
4.0
25
−65 to +150
A
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
Symbol
Y
JCL
R
qJA
R
qJA
Value
24.4
85
330
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Symbol
V
F
0.55
0.65
0.48
0.57
I
R
50
5
mA
mA
Value
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width
≤
380
ms,
Duty Cycle
≤
2.0%.
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2
NTS260SF
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
T
A
= 150°C
T
A
= 125°C
10
T
A
= 150°C
T
A
= 125°C
1
T
A
= 85°C
T
A
= 25°C
1
T
A
= 85°C
T
A
= 25°C
0.1
0.1
0.3
T
A
= −55°C
0.5
0.7
0.9
1.1
1.3
1.5
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
0.2
0.4
0.6
T
A
= −55°C
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01
1.E−02
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.E−01
1.E−02
1.E−03
1.E−03
1.E−04
1.E−04
1.E−05
T
A
= 25°C
1.E−05
1.E−06
1.E−07
5
15
25
T
A
= 25°C
1.E−06
1.E−07
5
15
25
35
45
55
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
35
45
55
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
4
Figure 4. Maximum Reverse Characteristics
DC
3
SQUARE WAVE
2
R
qJL
= 24.4°C/W
100
1
10
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
0
0 10 20 30 40 50 60 70 80 90 100110 120 130140150
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NTS260SF
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
E
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
−
8°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
D
1
2
POLARITY INDICATOR
OPTIONAL AS NEEDED
A1
A
END VIEW
TOP VIEW
q
DIM
A
A1
b
c
D
E
L
H
E
q
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
H
E
SIDE VIEW
2X
c
RECOMMENDED
SOLDERING FOOTPRINT*
4.20
2X
L
1.25
2X
b
2X
1.22
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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