(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
, T
J
Value
60
Unit
V
2.0
4.0
25
−65 to +150
A
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
Symbol
Y
JCL
R
qJA
R
qJA
Value
24.4
85
330
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Symbol
V
F
0.55
0.65
0.48
0.57
I
R
50
5
mA
mA
Value
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width
≤
380
ms,
Duty Cycle
≤
2.0%.
www.onsemi.com
2
NTS260SF
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
T
A
= 150°C
T
A
= 125°C
10
T
A
= 150°C
T
A
= 125°C
1
T
A
= 85°C
T
A
= 25°C
1
T
A
= 85°C
T
A
= 25°C
0.1
0.1
0.3
T
A
= −55°C
0.5
0.7
0.9
1.1
1.3
1.5
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
0.2
0.4
0.6
T
A
= −55°C
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01
1.E−02
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.E−01
1.E−02
1.E−03
1.E−03
1.E−04
1.E−04
1.E−05
T
A
= 25°C
1.E−05
1.E−06
1.E−07
5
15
25
T
A
= 25°C
1.E−06
1.E−07
5
15
25
35
45
55
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
35
45
55
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
4
Figure 4. Maximum Reverse Characteristics
DC
3
SQUARE WAVE
2
R
qJL
= 24.4°C/W
100
1
10
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
0
0 10 20 30 40 50 60 70 80 90 100110 120 130140150
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
www.onsemi.com
3
NTS260SF
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
E
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
−
8°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
D
1
2
POLARITY INDICATOR
OPTIONAL AS NEEDED
A1
A
END VIEW
TOP VIEW
q
DIM
A
A1
b
c
D
E
L
H
E
q
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
H
E
SIDE VIEW
2X
c
RECOMMENDED
SOLDERING FOOTPRINT*
4.20
2X
L
1.25
2X
b
2X
1.22
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
京公网安备 11010802033920号
EEWORLD
