DSEI 12-12A
Fast Recovery
Epitaxial Diode (FRED)
I
FAV
= 11 A
V
RRM
= 1200 V
t
rr
= 50 ns
V
RSM
V
1200
V
RRM
V
1200
Type
A
C
TO-220 AC
C
DSEI 12-12A
A
A = Anode, C = Cathode
C
Symbol
I
FRMS
I
FAVM
•
I
FRM
I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 100°C; rectangular, d = 0.5
t
p
< 10 µs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
25
11
150
75
80
65
70
28
27
21
20
-40...+150
150
-40...+150
A
A
A
A
A
A
2
s
A
2
s
°C
°C
°C
W
Nm
g
Features
• International standard package
JEDEC TO-220 AC
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Symbol
T
C
= 25°C
mounting torque
typical
Conditions
78
0.4...0.6
2
Characteristic Values
typ.
max.
250
150
4
2.2
2.6
1.65
46.2
1.6
0.5
60
µA
µA
mA
V
V
V
mΩ
K/W
K/W
K/W
ns
A
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
I
R
V
R
= V
RRM
V
R
= 0.8·V
RRM
V
R
= 0.8·V
RRM
I
F
= 12 A
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
T
VJ
= 25°C
V
F
V
T0
r
T
R
thJC
R
thCH
R
thJA
t
rr
I
RM
For power-loss calculations only
T
VJ
= T
VJM
I
F
= 1 A; -di/dt = 50 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 540 V; I
F
= 12 A; -di
F
/dt = 100 A/µs
L < 0.05 µH; T
VJ
= 100°C
50
6.5
70
7.2
•
I
FAVM
rating includes reverse blocking losses at T
VJM
. V
R
=
0.8·V
RRM
,
duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20071004
© 2004 IXYS All rights reserved
1-3
DSEI 12-12A
30
3.0
2.5
20
2.0
30
25
20
I
F
= 11 A
22 A
11 A
5.5 A
T
VJ
= 100°C
V
R
= 540 V
I
F
= 11 A
22 A
11 A
5.5 A
T
VJ
= 100°C
V
R
= 540 V
max
max
I
F
[A]
10
T
VJ
= 150°C
100°C
25°C
Q
r
1.5
I
RM
15
typ.
[µC]
1.0
0.5
[A]
10
5
typ.
0
0
1
2
3
0.0
1
10
100
1000
0
0
100
200
300
400
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
1.4
1.2
1.0
-di
F
/dt [A/µs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
1.0
T
VJ
= 100°C
V
R
= 540 V
0.8
-di
F
/dt [A/µs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
60
50
40
1200
1000
800
T
VJ
= 125°C
I
F
= 11 A
t
fr
V
FR
t
rr
K
f
0.8
0.6
0.4
0.2
0
40
80
120
160
I
RM
Q
r
0.6
max
[µs]
0.4
I
F
= 11 A
22 A
11 A
5.5 A
t
fr
600
V
FR
30
[V]
20
[ns]
400
200
0
400
0.2
typ.
10
0
0
100
200
300
400
0
100
200
300
0.0
T
VJ
[°C]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
-di
F
/dt [A/µs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
di
F
/dt [A/µs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
1.6
1.2
Z
thJC
0.8
[k/W]
0.4
0.0
0.001
0.01
0.1
t [s]
1
10
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
20071004
© 2004 IXYS All rights reserved
2-3
Analog electronics
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