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CPDQR5V0

Description
RF Transceiver Ultra-Hi Perf RF Narrowbd Transceiver
CategoryDiscrete semiconductor    diode   
File Size180KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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CPDQR5V0 Overview

RF Transceiver Ultra-Hi Perf RF Narrowbd Transceiver

CPDQR5V0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Breakdown voltage nominal value7 V
Maximum clamping voltage15 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityBIDIRECTIONAL
surface mountYES
Base Number Matches1
SMD ESD Protection Diode
SMD Diodes Specialist
CPDQR5V0
Features
(RoHS Device)
Bi-directional ESD protection.
(16kV) IEC 61000-4-2 rating.
Surface mount package.
Ultra small SMD package:0402.
High component density.
0402(1005)
0.041(1.05)
0.037(0.95)
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking Code:
CPDQR5V0: E5
Mounting position: Any.
Weight: 0.001 gram(approx.).
0.026(0.65)
0.022(0.55)
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Diode breakdown voltage
Leakage current
Junction capacitance
ESD capability
Clamping voltage
Peak pulse power
Operation temperature
Storage temperature
Conditions
I
R
= 1mA
V
R
= 5V
V
R
=0V,f =1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
I
PP
= 5A,T
P
=8/20us
T
P
=8/20us
Symbol Min Typ Max Unit
V
BD
I
L
C
T
ESD
V
C
P
PP
T
j
T
STG
-55
5.1
7.0
0.1
15
2.0
20
V
uA
pF
kV
V
W
O
16
8
15
75
125
150
C
C
O
REV:D
QW-A7013
Page 1
Comchip Technology CO., LTD.

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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