SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
KTC3551T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
A
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dis sipation.
Complementary to KTA1551T.
C
L
G
High-Speed Switching.
1
E
F
G
H
I
J
K
L
J
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
RATING
80
80
50
5
1.0
3
200
0.9
150
-55 150
)
UNIT
V
V
V
A
mA
W
1. EMITTER
2. BASE
3. COLLECTOR
Marking
Lot No.
Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Switching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=100 A, V
BE
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
I
C
=500mA, I
B
=10mA
I
C
=300mA, I
B
=6mA
I
C
=500mA, I
B
=10mA
V
CE
=2V, I
C
=100mA
V
CE
=10V, I
C
=300mA
V
CB
=10V, f=1MHz
PW=20µs
DC
<
1%
=
I
B1
I
B2
R
B
R
L
OUTPUT
MIN.
-
-
80
80
50
5
-
-
-
200
-
-
-
Storage Time
t
stg
50Ω
V
R
100µF
470µF
V
CC
=25V
Fall Time
t
f
V
BE
=-5V
20I
B1
=-20I
B2
=I
C
=500mA
2001. 6. 28
Revision No : 0
I
MAXIMUM RATING (Ta=25
)
F
H
J
TSM
HK
TYP.
-
-
-
-
-
-
130
90
0.81
-
420
6
35
MAX.
0.1
0.1
-
-
-
-
190
135
1.2
560
-
-
-
MHz
pF
UNIT
A
A
V
V
V
V
mV
mV
V
-
330
-
nS
-
40
-
1/3
KTC3551T
I
C
- V
CE
1K
50mA
h
FE
- I
C
10mA
COLLECTOR CURRENT I
C
(A)
20m
A
800
600
400
200
0
6mA
4mA
2mA
DC CURRENT GAIN h
FE
30mA
40mA
1K
8mA
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
100
50
30
V
CE
=2V
I
B
=0mA
0
0.2
0.4
0.6
0.8
1.0
10
0.01
0.03
0.1
0.3
1.0
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
I
C
/I
B
=20
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
0.5
0.3
I
C
/I
B
=50
1
0.5
0.3
0.1
0.05
0.03
C
5 C
25
a=7
a=-
T
T
C
25
Ta=
0.1
0.05
0.03
5
Ta=7
C
Ta=25
C
25
Ta=-
C
0.01
0.01
0.03
0.1
0.3
1
0.01
0.01
0.03
0.1
0.3
1
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
V
BE(sat)
- I
C
10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
5
3
COLLECTOR CURRENT I
C
(A)
I
C
/I
B
=50
I
C
- V
BE
1.0
0.9
0.8
0.7
0.6
Ta=7
5 C
Ta=2
5 C
V
CE
=2V
Ta=-25 C
Ta=25 C
Ta=75 C
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.5
0.3
0.1
0.01
0.03
0.1
0.3
1
0.6
0.8
Ta=-2
5 C
1
1.0
1.2
COLLECTOR CURRENT I
C
(A)
BASE-EMITTER VOLTAGE V
BE
(V)
2001. 6. 28
Revision No : 0
2/3
KTC3551T
f
T
- I
C
TRANSITION FREQUENCY f
T
(MHz)
5K
3K
COLLECTOR OUTPUT CAPACITANCE
C
ob
(pF)
V
CE
=10V
C
ob
- V
CB
100
50
30
f=1MHz
1K
500
300
10
5
3
100
50
0.01
0.03
0.1
0.3
1
1
0.1
0.3
1
3
10
30
100
COLLECTOR-BASE VOLTAGE V
CB
(V)
COLLECTOR CURRENT I
C
(A)
SAFE OPERATING AREA
5
3
COLLECTOR CURRENT I
C
(A)
1
0.5
0.3
Pc - Ta
I
C
MAX.(PULSED)
COLLECTOR POWER DISSIPATION
P
C
(W)
1.2
MOUNTED ON A
S*
0
µ
10
S*
0
µ
50
1m
I
C
MAX
(CONTINUOUS)
D
C
O
PE
S*
1.0
0.8
0.6
0.4
0.2
0
CERAMIC BOARD
(600mm
2
0.8mm)
10
m
S*
10
RA
TI
O
S*
0m
0.1
0.05
0.03
0.01
0.1
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm
2
0.8mm)
N
0
20
40
60
80
100
120
140
160
0.3
1
3
10
30
100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2001. 6. 28
Revision No : 0
3/3
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