BSC130P03LS G
OptiMOS
™
-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated; RoHS compliant
• Vgs=25V, specially suited for notebook applications
• Halogen-free according to IEC61249-2-21
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
-30
13
-22.5
V
mW
A
PG-TDSON-8
Type
BSC130P03LS G
Package
PG-TDSON-8
Marking
130P03LS
Lead free
Yes
Packing
Dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=70 °C
T
A
=25 °C
1)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
I
D,pulse
E
AS
V
GS
P
tot
T
C
=25 °C
T
A
=25 °C
1)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
JESD22-A114-HBM
T
C
=25 °C
2)
I
D
=-22.5 A,
R
GS
=25
W
Value
-22,5
-22,5
-12
-90
148
±25
69
2,5
-55 ... 150
1C (1kV-2kV)
260 °C
55/150/56
°C
mJ
V
W
Unit
A
Rev. 1.04
page 1
2010-05-04
BSC130P03LS G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJC
R
thJA
6 cm
2
cooling area
1)
-
-
1,8
K/W
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250mA
V
GS(th)
V
DS
=V
GS
,
I
D
=-150 µA
V
DS
=-30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-22.5 A
V
GS
=-25 V,
V
DS
=0 V
V
GS
=-10 V,
I
D
=-22.5 A
-30
-2,2
-
-1,5
-
-1
V
Zero gate voltage drain current
I
DSS
-
-0,1
-1
µA
-
-
-
-
20
-10
-10
9,4
3,8
39
-100
-100
13,0
-
-
nA
mW
W
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
1)
See Figure 3.
Rev. 1.04
page 2
2010-05-04
BSC130P03LS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=-22.5 A,
T
j
=25 °C
V
R
=15 V,
I
F
=|I
S
|,
di
F
/dt =100 A/µs
-
T
C
=25 °C
-
-
-
-0,9
-90
-1,2
V
-
22,5
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=-15 V,
V
GS
=0 V
V
DD
=-24 V,
I
D
=22.5 A,
V
GS
=0 to -10 V
-
-
-
-
-
-
-
-7,7
-4,3
-20,5
-24,0
-54,9
-2,9
-14,8
-10,3
-5,7
-30,8
-35,4
-73,1
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15 V,
V
GS
=-
10 V,
I
D
=22.5 A,
R
G
=6
W
V
GS
=0 V,
V
DS
=-15 V,
f
=1 MHz
-
-
-
-
-
-
-
2760
857
690
11,4
65,6
43,5
35,1
3670
1140
1000
17,1
98,4
65,3
52,7
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
t
rr
-
33
-
ns
Reverse recovery charge
Q
rr
-
24
-
nC
Rev. 1.04
page 3
2010-05-04
BSC130P03LS G
1 Power dissipation
P
tot
=f(T
C
);
t
p
≤10 s
2 Drain current
I
D
=f(T
C
); |V
GS
|≥10 V;
t
p
≤10 s
80
24
70
20
60
16
50
P
tot
[W]
40
-I
D
[A]
0
40
80
120
160
12
30
8
20
4
10
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C
1)
;
D
=0
parameter:
t
p
10
2
100
4 Max. transient thermal impedance
Z
thJS
=f(t
p
)
parameter:
D
=t
p
/T
10 µs
10
1
10
100 µs
10
0
0.01
1
Z
thJS
[K/W]
-I
D
[A]
1 ms
0.2
10
1
10
limited by on-state
resistance
10 ms
0.1
0.05
10
-1
DC
0,1
0.02
single pulse
10
0
1
10
-2
0,1
1
10
100
0,01
0,00001
0,0001
0,001
0,01
0,1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-V
DS
[V]
t
p
[s]
Rev. 1.04
page 4
2010-05-04
BSC130P03LS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
60
-10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
50
50
-4.5 V
-2.5 V
40
-3.5 V
-2.7 V
-3 V
-3.2 V
40
R
DS(on)
[mW]
30
-I
D
[A]
30
-3.2 V
-3.5 V
-3 V
20
-4.5 V
20
-2.7 V
10
10
-2.5 V
-2.3 V
-10 V
0
0
1
2
3
0
0
10
20
30
40
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
60
25 °C
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
50
50
40
40
150 °C
30
-I
D
[A]
30
g
fs
[S]
20
10
0
0
1
2
3
4
0
10
20
30
20
10
0
-V
GS
[V]
-I
D
[A]
Rev. 1.04
page 5
2010-05-04
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