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STPLED525

Description
MOSFET N-ch 525V 1.2 Ohm 5A FET in TO-220
Categorysemiconductor    Discrete semiconductor   
File Size2MB,22 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STPLED525 Overview

MOSFET N-ch 525V 1.2 Ohm 5A FET in TO-220

STPLED525 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerSTMicroelectronics
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage525 V
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance1.2 Ohms
Vgs th - Gate-Source Threshold Voltage3.6 V
Vgs - Gate-Source Voltage30 V
Qg - Gate Charge17.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
PackagingTube
Fall Time16 ns
Pd - Power Dissipation70 W
Rise Time11 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time9 ns
Unit Weight0.011640 oz
STDLED525, STFILED525,
STPLED525, STULED525
N-channel 525 V, 1.2
Ω
typ., 5.0 A Power MOSFET
in DPAK, I
2
PAKFP, TO-220 and IPAK packages
Datasheet
preliminary data
Features
TAB
3
1
Order codes
DPAK
1
2
3
V
DS
R
DS(on)
max
I
D
P
TOT
70 W
25 W
STDLED525
STFILED525
STPLED525
STULED525
TAB
3
1
2
525 V
TAB
I²PAKFP
1.5
Ω
100% avalanche tested
3
2
1
TO-220
Extremely high dv/dt capability
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
IPAK
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
O
bs
et
l
o
ro
P
e
S(3)
uc
d
s)
t(
O
Applications
-
Description
Zener-protected
so
b
te
le
ro
P
uc
d
5.0 A
s)
t(
70 W
LED lighting applications
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
AM01476v1
Table 1. Device summary
Order codes
STDLED525
STFILED525
LED525
STPLED525
STULED525
TO-220
IPAK
Tube
Marking
Package
DPAK
I
2
PAKFP (TO-281)
Packaging
Tape and reel
March 2013
DocID024423 Rev 1
1/22
www.st.com
22
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

STPLED525 Related Products

STPLED525 STULED525 STDLED525
Description MOSFET N-ch 525V 1.2 Ohm 5A FET in TO-220 MOSFET MOSFET N-Ch 525V 12Ohm 5A Power FET DPAK
Product Category MOSFET MOSFET MOSFET
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Technology Si Si Si
Mounting Style Through Hole Through Hole SMD/SMT
Package / Case TO-220-3 TO-251-3 TO-252-3
Number of Channels 1 Channel 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 525 V 525 V 525 V
Id - Continuous Drain Current 5 A 5 A 5 A
Rds On - Drain-Source Resistance 1.2 Ohms 1.2 Ohms 1.2 Ohms
Vgs th - Gate-Source Threshold Voltage 3.6 V 3.6 V 3.6 V
Vgs - Gate-Source Voltage 30 V 30 V 30 V
Qg - Gate Charge 17.5 nC 17.5 nC 17.5 nC
Minimum Operating Temperature - 55 C - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C + 150 C
Configuration Single Single Single
Packaging Tube - Cut Tape
Fall Time 16 ns 16 ns 16 ns
Pd - Power Dissipation 70 W 70 W 70 W
Rise Time 11 ns 11 ns 11 ns
Transistor Type 1 N-Channel 1 N-Channel 1 N-Channel
Typical Turn-Off Delay Time 29 ns 29 ns 29 ns
Typical Turn-On Delay Time 9 ns 9 ns 9 ns
Unit Weight 0.011640 oz 0.139332 oz 0.139332 oz
RoHS Details - Details
Factory Pack Quantity 1000 - 2500
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