BLF6G27L-50BN
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2500 to 2700
I
Dq
(mA)
430
V
DS
(V)
28
P
L(AV)
(W)
3
G
p
(dB)
16.5
D
(%)
14.5
ACPR
(dBc)
47
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to
2700 MHz frequency range
BLF6G27L-50BN
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4, 5
6, 7
Pinning
Description
drain
gate
source
sense drain
sense gate
2
6
7
3
[1]
Simplified outline
4
1
5
Graphic symbol
1
4, 5
2
3
6, 7
sym126
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G27L-50BN
-
flanged ceramic package; 2 mounting holes; 6 leads
Version
SOT1112A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
V
GS(sense)
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
0.5
65
-
Max
65
+13
+9
+150
200
Unit
V
V
V
C
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Conditions
Typ Unit
1.3
K/W
Symbol Parameter
R
th(j-case)
thermal resistance from junction to case T
case
= 80
C;
P
L
= 12.5 W (CW)
BLF6G27L-50BN#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 14
BLF6G27L-50BN
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C per section; unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
Dq
gate-source threshold voltage
quiescent drain current
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 72 mA
sense transistor:
I
DS
= 9.1 mA;
V
DS
= 26.5 V
main transistor:
V
DS
= 28 V
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 3.6 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.52 A
-
10
-
-
-
-
12
-
5.0
0.25
1.5
-
150
-
-
A
A
nA
S
Min
65
1.4
380
Typ
-
1.9
430
Max
-
2.4
480
Unit
V
V
mA
7. Application information
Table 7.
2-carrier W-CDMA application information
All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH;
PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz; f
1
= 2500 MHz;
f
2
= 2600 MHz; f
3
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 430 mA; T
case
= 25
C; unless
otherwise specified.
Symbol
G
p
D
ACPR
I
Dq
Parameter
power gain
drain efficiency
adjacent channel power ratio
quiescent drain current
Conditions
P
L(AV)
= 3 W
P
L(AV)
= 3 W
P
L(AV)
= 3 W
V
DD
= 28 V
Min
15.3
12.5
-
-
Typ
16.5
14.5
47
430
Max
-
-
43
-
Unit
dB
%
dBc
mA
Table 8.
1-carrier W-CDMA application information
All testing performed in Class-AB production test circuit; test signal 3GPP; test model 1; 64 DPCH;
PAR = 7.2 dB at 0.01 % probability on CCDF per carrier; f = 2700 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 430 mA; T
case
= 25
C; unless otherwise specified.
Symbol
PAR
O
Parameter
output peak-to-average ratio
Conditions
P
L(AV)
= 16 W
Min
4.1
Typ
4.7
Max
5.3
Unit
dB
7.1 Ruggedness in Class-AB operation
The BLF6G27L-50BN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 430 mA; P
L
= 40 W (CW); f = 2500 MHz.
BLF6G27L-50BN#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
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BLF6G27L-50BN
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
001aan478
17.0
G
p
(dB)
16.5
(1)
(2)
(3)
001aan474
50
η
D
(%)
40
(1)
(2)
16.0
30
(3)
15.5
20
15.0
10
14.5
0
5
10
15
20
P
L
(W)
25
0
0
5
10
15
20
P
L
(W)
25
V
DS
= 28 V; I
Dq
= 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1.
Single carrier IS-95 power gain as a function of
output power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of output power; typical values
BLF6G27L-50BN#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
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BLF6G27L-50BN
Power LDMOS transistor
−20
ACPR
885
(dBc)
−30
(1)
(2)
(3)
001aan481
−15
ACPR
1980
(dBc)
−30
(1)
(2)
(3)
001aan484
−40
−45
−50
−60
−60
−75
−70
0
5
10
15
20
P
L
(W)
25
−90
0
5
10
15
20
P
L
(W)
25
V
DS
= 28 V; I
Dq
= 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of output power; typical values
10
001aan485
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of output power; typical values
60
001aan486
PAR
8
(1)
(2)
(3)
P
L(M)
(W)
40
(1)
(2)
(3)
6
4
20
2
0
0
5
10
15
20
P
L
(W)
25
0
0
5
10
15
20
P
L
(W)
25
V
DS
= 28 V; I
Dq
= 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 430 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5.
Single carrier IS-95 peak-to-average power
ratio as a function of output power;
typical values
Fig 6.
Single carrier IS-95 peak power as a function
of output power; typical values
BLF6G27L-50BN#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 14
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