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PD54003-E

Description
RF MOSFET Transistors RF POWER transistor LDMOST family N-Chan
CategoryDiscrete semiconductor    The transistor   
File Size615KB,24 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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PD54003-E Overview

RF MOSFET Transistors RF POWER transistor LDMOST family N-Chan

PD54003-E Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeSOT
package instructionROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts10
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time25 weeks
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature165 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)52.8 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PD54003-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Datasheet — production data
Features
Excellent thermal stability
Common source configuration
P
OUT
= 3 W with 12 dB gain @ 500 MHz
New RF plastic package
PowerSO-10RF
(formed lead)
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz. The device features
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology, the PowerSO-10RF.
The superior linearity performance makes it an
ideal solution for portable radios. The PowerSO-
10RF is the first true surface-mount device (SMD)
plastic RF power package. It is based on the
highly reliable PowerSO-10, the first ST-
originated, JEDEC-approved, high-power SMD
package. It has been optimized specifically for RF
requirements, and offers excellent RF
performance as well as ease of assembly.
PowerSO-10RF
(straight lead)
Figure 1.
Pin connection
Source
Gate
Drain
Table 1.
Device summary
Order code
PD54003-E
PD54003TR-E
PD54003STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tape and reel
Tape and reel
June 2012
This is information on a product in full production.
Doc ID 12235 Rev 4
1/24
www.st.com
24

PD54003-E Related Products

PD54003-E PD54003S-E
Description RF MOSFET Transistors RF POWER transistor LDMOST family N-Chan RF MOSFET Transistors POWER R.F.
Brand Name STMicroelectronics STMicroelectronics
Maker STMicroelectronics STMicroelectronics
Parts packaging code SOT SOT
package instruction ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts 10 10
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (Abs) (ID) 4 A 4 A
Maximum drain current (ID) 4 A 4 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G2 R-PDSO-F2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 165 °C 165 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 52.8 W 52.8 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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