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P2N2222AG

Description
NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX
CategoryDiscrete semiconductor    The transistor   
File Size121KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance  
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NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX

P2N2222AG Parametric

Parameter NameAttribute value
Brand Nameonsemi
Is it lead-free?Lead free
Objectid2063261168
Parts packaging codeTO-92 (TO-226) 5.33mm Body Height
package instructionTO-226, 3 PIN
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionOBSOLETE
Samacsys Manufactureronsemi
Samacsys Modified On2024-05-25 23:23:41
YTEOL0
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns
P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
40
75
6.0
600
625
5.0
1.5
12
−55
to
+150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
P2N2
222A
AYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
P2N2222AG
P2N2222ARL1G
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
5000 Units/Bulk
2000/Tape & Ammo
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2222A/D
January, 2013
Rev. 7
1
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