CBR8M-L010 datasheet, PDF - EEWORLD Datasheet

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CBR8M-L010: DescriptionBridge Rectifiers 8A Bridge Rectifier 100Vrrm 100Vr 70Vrms; CategoryDiscrete semiconductor diode; File Size542KB，3 Pages; ManufacturerCentral Semiconductor

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CBR8M-L010 Overview

Bridge Rectifiers 8A Bridge Rectifier 100Vrrm 100Vr 70Vrms

CBR8M-L010 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	R-PSFM-W4
Contacts	4
Manufacturer packaging code	CASE DM
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	100 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PSFM-W4
JESD-609 code	e0
Maximum non-repetitive peak forward current	200 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	10 µA
Reverse test voltage	100 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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CBR8M-L010 SERIES

w w w. c e n t r a l s e m i . c o m

SILICON BRIDGE RECTIFIERS

8.0 AMP, 100 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR8M-L010 series

types are silicon, single phase, full wave bridge rectifiers

designed for general purpose, high current applications.

MARKING: FULL PART NUMBER

CASE DM

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL -L010

Peak Repetitive Reverse Voltage

VRRM

100

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current (TC=100°C)

Peak Forward Surge Current

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

IR

VF

VR

VR(RMS)

IO

IFSM

TJ, Tstg

Θ

JC

100

70

-L020

200

140

CBR8M

-L040 -L060

400

600

400

280

8.0

200

-65 to +150

3.0

600

420

-L080

800

560

-L100

1000

700

UNITS

V

A

°C

°C/W

CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

MAX

VR=Rated VRRM

10

IF=8.0A

1.1

UNITS

μA

V

R3 (11-October 2013)

CBR8M-L010 Related Products

	CBR8M-L010	CBR8M-L080	CBR8M-L040	CBR8M-L020
Description	Bridge Rectifiers 8A Bridge Rectifier 100Vrrm 100Vr 70Vrms	Bridge Rectifiers 8A Bridge Rectifier 800Vrrm 800Vr 560rms	Bridge Rectifiers 8A Bridge Rectifier 400Vrrm 200Vr 280rms	Bridge Rectifiers 8A Bridge Rectifier 200Vrrm 200Vr 140rms
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	R-PSFM-W4	R-PSFM-W4	CASE DM, 4 PIN	CASE DM, 4 PIN
Contacts	4	4	4	4
Manufacturer packaging code	CASE DM	CASE DM	CASE DM	CASE DM
Reach Compliance Code	compliant	compliant	unknown	unknown
Minimum breakdown voltage	100 V	800 V	400 V	200 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4
JESD-609 code	e0	e0	e0	e0
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A
Number of components	4	4	4	4
Phase	1	1	1	1
Number of terminals	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	8 A	8 A	8 A	8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	800 V	400 V	200 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA
Reverse test voltage	100 V	800 V	400 V	200 V
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	-	Central Semiconductor	Central Semiconductor	Central Semiconductor

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