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AFT21H350W03SR6

Description
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
Categorysemiconductor    Discrete semiconductor   
File Size534KB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V

AFT21H350W03SR6 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
TechnologySi
PackagingReel
TypeRF Power MOSFET
Unit Weight0.297698 oz
Freescale Semiconductor
Technical Data
Document Number: AFT21H350W03S
Rev. 0, 9/2013
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 63 watt asymmetrical Doherty RF power LDMOS transistors are
designed for cellular base station applications requiring very wide
instantaneous bandwidth capability covering the frequency range of 2110 to
2170 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 750 mA, V
GSB
= 0.7 Vdc, P
out
= 63 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
16.4
16.5
16.5
D
(%)
47.1
46.3
45.2
Output PAR
(dB)
7.5
7.5
7.4
ACPR
(dBc)
--26.0
--27.9
--30.1
NI-
-1230S-
-4S
AFT21H350W03SR6
AFT21H350W03SR6
AFT21H350W04GSR6
2110–2170 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
Features
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
NI-
-1230GS-
-4L
AFT21H350W04GSR6
Carrier
RF
inA
/V
GSA
3
(1)
RF
inB
/V
GSB
4
Peaking
(Top View)
2 RF
outB
/V
DSB
1 RF
outA
/V
DSA
Figure 1. Pin Connections
1. Pin connections 1 and 2 are DC coupled
and RF independent.
Freescale Semiconductor, Inc., 2013. All rights reserved.
AFT21H350W03SR6 AFT21H350W04GSR6
1
RF Device Data
Freescale Semiconductor, Inc.

AFT21H350W03SR6 Related Products

AFT21H350W03SR6 AFT21H350W04GSR6 AFT21H350W04GS
Description RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V RF MOSFET Transistors AFT21H350W04GS/CFM4///REEL 13 Q2/T3 *STANDARD MAR RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
Product Category RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP NXP
Technology Si Si Si
Type RF Power MOSFET RF Power MOSFET RF Power MOSFET
Unit Weight 0.297698 oz 0.297698 oz -
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