numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
58A
di
/
dt
≤
700A/µs
VR
≤
600V
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.20
0.9
0.15
0.7
0.5
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
9-2004
0.10
0.3
0.05
0.1
0.05
050-7100 Rev B
0
10
-5
SINGLE PULSE
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
10
Typical Performance Curves
I
D
, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
RC MODEL
200
180
160
140
120
100
80
60
40
20
0
APT60M75JFLL
VGS =15 &10V
8V
7.5V
7V
6.5
0.0492
0.0273F
Power
(watts)
0.142
0.469F
6V
0.0189
Case temperature. (°C)
44.2F
5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
NORMALIZED TO
= 10V @ I = 29A
D
180
160
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
TJ = -55°C
TJ = +25°C
TJ = +125°C
1.30
1.20
1.10
1.00
0.90
0.80
GS
VGS=10V
VGS=20V
0
60
50
40
30
20
10
0
25
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
20
40
60
80
100 120 140
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
I
D
, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0.90
-50
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
V
D
= 29A
= 10V
2.0
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7100 Rev B
9-2004
232
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
APT60M75JFLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
100
C, CAPACITANCE (pF)
50
100µS
1,000
Coss
10
1mS
10mS
100
Crss
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
600
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 58A
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
12
VDS= 120V
VDS= 300V
8
VDS= 480V
10
4
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
160
140
120
t
d(off)
V
DD
G
0
0
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
180
160
140
120
V
DD
G
= 400V
R
= 5Ω
T = 125°C
J
L = 100µH
t
d(on)
and t
d(off)
(ns)
= 400V
t
r
and t
f
(ns)
100
80
60
40
20
0
R
= 5Ω
T = 125°C
J
100
80
60
40
20
t
f
L = 100µH
t
r
t
d(on)
10
70
90
110
130
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
30
50
70
90
110
130
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
6000
V
I
DD
0
10
30
50
5000
= 400V
= 400V
R
= 5Ω
L = 100µH
E
ON
includes
diode reverse recovery
SWITCHING ENERGY (µJ)
4000
E
on
and E
off
(µJ)
T = 125°C
J
5000
4000
3000
2000
1000
0
D
J
= 58A
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery
E
off
3000
E
off
2000
E
on
1000
E
on
050-7100 Rev B
9-2004
0
70
90
110
130
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10
30
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT60M75JFLL
90%
10%
Gate Voltage
T
J
125°C
T
J
125°C
t
d(off)
t
d(on)
90%
Drain Current
90%
Gate Voltage
Drain Voltage
t
r
t
f
10%
10%
5%
Drain Voltage
Switching Energy
0
Drain Current
5%
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V
DD
I
D
V
DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Dimensions in Millimeters and (Inches)
ISOTOP
®
is a Registered Trademark of SGS Thomson.
Gate
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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