MT5C2568-20P datasheet, PDF - EEWORLD Datasheet

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MT5C2568-20P: DescriptionStandard SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size142KB，12 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT5C2568-20P Overview

Standard SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

MT5C2568-20P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micron Technology
Parts packaging code	DIP
package instruction	0.300 INCH, PLASTIC, DIP-28
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	20 ns
Other features	TTL-COMPATIBLE INPUTS & OUTPUTS
I/O type	COMMON
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	36.83 mm
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.32 mm
Maximum standby current	0.003 A
Minimum standby current	4.5 V
Maximum slew rate	0.125 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm
Base Number Matches	1

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OBSOLETE 3/1/95

MT5C2568

32K x 8 SRAM

SRAM

FEATURES

• High speed: 10, 12, 15, 20 and 25

• High-performance, low-power, CMOS double-metal

process

• Single +5V

±10%

power supply

• Easy memory expansion with

E and

E options

• All inputs and outputs are TTL-compatible

32K x 8 SRAM

PIN ASSIGNMENT (Top View)

28-Pin DIP

(SA-4)

A14

A12

Vcc

A13

A11

A10

DQ8

DQ7

DQ6

DQ5

DQ4

28-Pin SOJ

(SD-2)

A14

A12

DQ1

DQ2

DQ3

Vss

Vcc

A13

A11

A10

DQ8

DQ7

DQ6

DQ5

DQ4

OPTIONS

• Timing

10ns access

12ns access

15ns access

20ns access

25ns access

• Packages

Plastic DIP (300 mil)

Plastic SOJ (300 mil)

• 2V data retention (optional)

• Low power (optional)

MARKING

-10

-12

-15

-20

-25

None

DQ1

DQ2

DQ3

Vss

• Temperature

Commercial (0°C to +70°C)

Industrial

(-40°C to +85°C)

Automotive (-40°C to +125°C)

Extended

(-55°C to +125°C)

• Part Number Example: MT5C2568DJ-20 L

NOTE: Not all combinations of operating temperature, speed, data retention

and low power are necessarily available. Please contact the factory for availabil-

ity of specific part number combinations.

GENERAL DESCRIPTION

The MT5C2568 is organized as a 32,768 x 8 SRAM using

a four-transistor memory cell with a high-speed, low-power

CMOS process. Micron SRAMs are fabricated using double-

layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications,

Micron offers chip enable (/C

E) and output enable (?O

E) with

this organization. These enhancements can place the out-

puts in High-Z for additional flexibility in system design.

Writing to these devices is accomplished when write

enable (?W

E) and

E inputs are both LOW. Reading is

accomplished when

E remains HIGH and

E and

E go

LOW. The device offers a reduced power standby mode

MT5C2568

Rev. 2/95

when disabled. This allows system designers to meet low

standby power requirements.

The “P” version provides a reduction in both operating

current (I

) and TTL standby current (I

). The latter is

achieved through the use of gated inputs on the

E and

address lines, which also facilitates the design of battery

backed systems. That is, the gated inputs simplify the

design effort and circuitry required to protect against inad-

vertent battery current drain during power-down, when

inputs may be at undefined levels.

All devices operate from a single +5V power supply and

all inputs and outputs are fully TTL-compatible.

Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.

Micron Semiconductor, Inc.

MT5C2568-20P Related Products

	MT5C2568-20P	MT5C2568-15P	MT5C2568DJ-25P	MT5C2568DJ-15P	MT5C2568DJ-20P
Description	Standard SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 15ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
Parts packaging code	DIP	DIP	SOJ	SOJ	SOJ
package instruction	0.300 INCH, PLASTIC, DIP-28	0.300 INCH, PLASTIC, DIP-28	0.300 INCH, PLASTIC, SOJ-28	0.300 INCH, PLASTIC, SOJ-28	0.300 INCH, PLASTIC, SOJ-28
Contacts	28	28	28	28	28
Reach Compliance Code	unknown	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	20 ns	15 ns	25 ns	15 ns	20 ns
Other features	TTL-COMPATIBLE INPUTS & OUTPUTS	TTL-COMPATIBLE INPUTS & OUTPUTS	TTL-COMPATIBLE INPUTS & OUTPUTS	TTL-COMPATIBLE INPUTS & OUTPUTS	TTL-COMPATIBLE INPUTS & OUTPUTS
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDIP-T28	R-PDIP-T28	R-PDSO-J28	R-PDSO-J28	R-PDSO-J28
JESD-609 code	e0	e0	e0	e0	e0
length	36.83 mm	36.83 mm	18.44 mm	18.44 mm	18.44 mm
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8
Number of functions	1	1	1	1	1
Number of terminals	28	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	SOJ	SOJ	SOJ
Encapsulate equivalent code	DIP28,.3	DIP28,.3	SOJ28,.34	SOJ28,.34	SOJ28,.34
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.32 mm	4.32 mm	3.66 mm	3.66 mm	3.66 mm
Maximum standby current	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.125 mA	0.14 mA	0.14 mA	0.14 mA	0.125 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	J BEND
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
width	7.62 mm	7.62 mm	7.67 mm	7.67 mm	7.67 mm
Number of ports	1	-	1	-	1
Exportable	YES	-	YES	-	YES

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