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5SDD20F4800

Description
Rectifier Diode, 1 Phase, 1 Element, 1850A, 4800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size131KB,4 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SDD20F4800 Overview

Rectifier Diode, 1 Phase, 1 Element, 1850A, 4800V V(RRM), Silicon,

5SDD20F4800 Parametric

Parameter NameAttribute value
MakerABB
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.13 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current24300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature160 °C
Maximum output current1850 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4800 V
Maximum reverse current75000 µA
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
V
RRM
=
I
FAVM
=
I
FRMS
=
I
FSM
V
F0
r
F
=
=
=
5000 V
1850 A
2900 A
23500 A
0.99 V
0.282 mΩ
Rectifier Diode
5SDD 20F5000
Doc. No. 5SYA1162-01 Jan. 01
Very low on-state losses
Optimum power handling capability
Blocking
Part Number
V
RRM
V
RSM
I
RRM
5SDD 20F5000
5000 V
5200 V
5SDD 20F4800
4800 V
5000 V
75 mA
5SDD 20F4400
4400 V
4600 V
Conditions
f = 50 Hz, t
p
= 10ms
f = 5 Hz, t
p
= 10ms
V
RRM
T
j
= 160°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
0.5 kg
30 mm
20 mm
22 kN
20 kN
24 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
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