VS-VSKL300/08PbF
www.vishay.com
Vishay Semiconductors
INT-A-PAK Power Module Thyristor/Diode, 300 A
FEATURES
• Electrically isolated base plate
• 3000 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
INT-A-PAK
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
I
T(AV)
Type
Package
300 A
Modules -thyristor, standard
INT-A-PAK
• Battery chargers
• Welders
• Power converters
• Alternators
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
DRM
/V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
53 °C
CHARACTERISTICS
VALUES
800
300
116
6500
6900
214
195
2140
-40 to +140
UNITS
V
A
A
A
kA
2
s
kA
2
s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-VSKL300/08PbF
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
800
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
I
RRM
/I
DRM
AT 125 °C
mA
50
Revision: 27-Jul-2018
Document Number: 94557
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKL300/08PbF
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction half sine wave
As AC switch
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
VALUES
300
53
116
6600
6900
5500
5800
214
195
151
138
2140
0.796
0.868
0.972
m
(I >
x I
T(AV)
), T
J
maximum
T
J
= 25 °C, I
pk
= 500 A
SCR
DIODE
0.88
1.35
1.20
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
SWITCHING
PARAMETER
Typical delay time
Typical turn-off time
SYMBOL
t
d
t
q
TEST CONDITIONS
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs, V
R
= 50 V
dV/dt = 20 V/μs, Gate 0 V 100
,
t
p
= 500 μs
VALUES
1.0
μs
100
UNITS
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
RMS insulation voltage
SYMBOL
dV/dt
I
DRM
,
I
RRM
V
INS
TEST CONDITIONS
T
J
= T
J
maximum linear to 67 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
50 Hz, circuit to base, all terminal shorted, t = 1 s
VALUES
500
50
3000
UNITS
V/μs
mA
V
Revision: 27-Jul-2018
Document Number: 94557
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKL300/08PbF
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum holding current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate voltage not to trigger
DC gate current not to trigger
Maximum non-repetitive rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
V
GT
I
GT
I
H
+V
GM
-V
GM
V
GD
I
GD
dI/dt
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum
Maximum gate current/voltage not to trigger is
the maximum value which will not trigger any
unit with rated V
DRM
anode to cathode applied
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= 25 °C
Anode supply: 12 V resistive load
VALUES
10.0
2.0
3.0
3
200
600
20
5.0
0.30
10
1000
UNITS
W
A
V
mA
V
V
mA
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
IAP to heatsink
busbar to IAP
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
TEST CONDITIONS
VALUES
-40 to +140
-40 to +150
0.19
K/W
0.035
4 to 6
500
17.8
INT-A-PAK
Nm
g
oz.
UNITS
°C
R
CONDUCTION PER JUNCTION
DEVICES
180°
VSKL300
0.019
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.022
90°
0.028
60°
0.041
30°
0.068
180°
0.013
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.023
90°
0.031
60°
0.043
30°
0.069
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Jul-2018
Document Number: 94557
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKL300/08PbF
www.vishay.com
Vishay Semiconductors
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
150
600
500
400
RMS Limit
DC
100
30°
Conduction Angle
300
Conduction Period
50
60°
90°
120°
180°
200
100
0
0
100
200
300
0
0
50 100 150 200 250 300 350
Average On-state Current (A)
180°
120°
90°
60°
30°
400
500
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
150
Peak Half Sine Wave On-state Current (A)
6000
5500
5000
4500
4000
3500
3000
2500
1
10
100
Number of Equal Amplitude Half Cycle Current Pulsed (N)
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration
Initial Tj = 140°C
No Voltage Reapplied
Rated Vrrm reapplied
100
Conduction Angle
30°
50
60°
90°
120°
180°
DC
0
0
100
200
300
400
500
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
Peak Half Sine Wave On-state Current (A)
500
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
0.01
0.1
1
10
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration
Initial Tj = 140°C
No Voltage Reapplied
Rated Vrrm reapplied
400
RMS Limit
300
200
Conduction Angle
100
0
0
50
180°
120°
90°
60°
30°
100 150 200 250 300 350
Average On-state Current (A)
Pulse Train Durations (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 94557
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKL300/08PbF
www.vishay.com
Vishay Semiconductors
10000
Instantaneous On-state Current (A)
10000
Instantaneous On-state Current (A)
1000
Tj = 140°C
1000
100
100
10
Tj = 25°C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous On-state Voltage (V)
10
Tj = 140°C
Tj = 25°C
1
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics (SCR)
Fig. 8 - On-State Voltage Drop Characteristics (Diode)
Transient Thermal Impedance Z
thJC
(K/W)
1
0.1
0.01
0.001
Single Pulse
(Thermal Resistance)
0.0001
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KL
1
1
2
3
4
5
-
-
-
-
-
2
300
3
08
4
PbF
5
Vishay Semiconductors product
Circuit configuration
Current rating (300 = 300 A)
Voltage rating (08 = 800 V)
PbF = Lead (Pb)-free
Revision: 27-Jul-2018
Document Number: 94557
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
