ZVN2120CSTZ datasheet, PDF - EEWORLD Datasheet

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ZVN2120CSTZ: DescriptionMOSFET; Categorysemiconductor Discrete semiconductor; File Size40KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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MOSFET

ZVN2120CSTZ Parametric

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	Diodes
RoHS	No
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	180 mA
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
Fall Time	8 ns
Pd - Power Dissipation	700 mW
Product	MOSFET Small Signal
Rise Time	8 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	8 ns
Unit Weight	0.016000 oz

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

FEATURES

* 200 Volt V

* R

DS(on)

=10Ω

ZVN2120C

REFER TO ZVN2120A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

E-Line

TO92 Compatible

VALUE

200

180

UNIT

°C

700

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

500

100

200

100

MAX.

UNIT CONDITIONS.

=1mA, V

=0V

ID=1mA, V

= V

20V, V

=0V

=200V, V

=160V, V

=0V,

T=125°C

(2)

=25V, V

=10V

=10V,I

=250mA

=25V,I

=250mA

Ω

Static Drain-Source On-State R

DS(on)

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

iss

oss

rss

d(on)

d(off)

=25 V, V

=0V, f=1MHz

≈

25V, I

=250mA

(1) Measured under pulsed conditions. Width=300

s. Duty cycle

≤

(2) Sample test.

3-371

(

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