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BD235

Description
Bipolar Transistors - BJT NPN General Purpose
CategoryDiscrete semiconductor    The transistor   
File Size209KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BD235 Overview

Bipolar Transistors - BJT NPN General Purpose

BD235 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSIP
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment25 W
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max0.6 V
BD235
BD237
Low voltage NPN power transistors
Features
Low saturation voltage
NPN transistors
Applications
Audio, power linear and switching applications
3
2
1
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type is BD238.
Figure 1.
SOT-32
(TO-126)
Internal schematic diagram
Table 1.
Device summary
Marking
BD235
BD237
Package
SOT-32
SOT-32
Packaging
Tube
Tube
Order codes
BD235
BD237
June 2009
Doc ID 4189 Rev 3
1/9
www.st.com
9
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