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BD1766STU

Description
Bipolar Transistors - BJT PNP Epitaxial Sil
CategoryDiscrete semiconductor    The transistor   
File Size158KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BD1766STU Overview

Bipolar Transistors - BJT PNP Epitaxial Sil

BD1766STU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
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Please
email any questions regarding the system integration to
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Description Bipolar Transistors - BJT PNP Epitaxial Sil Wireless Charging Coils WE-WPCC Transm Extnd 6.3uH .017Ohm Qi-A11
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 63
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 30 W 30 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
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