BZX84-G-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
3
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
± 2 % tolerance.
• AEC-Q101 qualified
• ESD capability acc. to AEC-Q101:
human body model: > 8 kV,
machine model: > 800 V
1
2
20421
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZX84C2V4-G3-08 to BZX84C75-G3-08
BZX84-G-series
BZX84B2V4-G3-08 to BZX84B75-G3-08
BZX84C2V4-G3-18 to BZX84C75-G3-18
BZX84B2V4-G3-18 to BZX84B75-G3-18
TAPED UNITS PER REEL
3000 (8 mm tape on 7" reel)
10 000 (8 mm tape on 13" reel)
MINIMUM ORDER QUANTITY
15 000
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.1 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
T
amb
= 25 °C, device on fiberglass substrate,
acc. layout on page 7
T
amb
= 25 °C, device on fiberglass substrate,
acc. layout on page 7
SYMBOL
P
tot
R
thJA
T
j
T
stg
T
op
VALUE
300
420
150
- 65 to + 150
- 55 to + 150
UNIT
mW
K/W
°C
°C
°C
Rev. 1.2, 28-Feb-13
Document Number: 83458
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-G-Series
www.vishay.com
Vishay Semiconductors
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
MARKING
CODE
V
Z
at I
ZT1
V
MIN.
BZX84C2V4-G
BZX84C2V7-G
BZX84C3V0-G
BZX84C3V3-G
BZX84C3V6-G
BZX84C3V9-G
BZX84C4V3-G
BZX84C4V7-G
BZX84C5V1-G
BZX84C5V6-G
BZX84C6V2-G
BZX84C6V8-G
BZX84C7V5-G
BZX84C8V2-G
BZX84C9V1-G
BZX84C10-G
BZX84C11-G
BZX84C12-G
BZX84C13-G
BZX84C15-G
BZX84C16-G
BZX84C18-G
BZX84C20-G
BZX84C22-G
BZX84C24-G
BZX84C27-G
BZX84C30-G
BZX84C33-G
BZX84C36-G
BZX84C39-G
BZX84C43-G
BZX84C47-G
BZX84C51-G
BZX84C56-G
BZX84C62-G
BZX84C68-G
BZX84C75-G
G50
G51
G52
G53
G54
G55
G56
G57
G58
G59
G60
G61
G62
G63
G64
G65
G66
G67
G68
G69
G70
G71
G72
G73
G74
G75
G76
G77
G78
G79
G80
G81
G82
G83
G84
G85
G86
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
TEST CURRENT
I
ZT1
mA
I
ZT2
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
Z
ZK
at
I
ZT2
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Rev. 1.2, 28-Feb-13
Document Number: 83458
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-G-Series
www.vishay.com
Vishay Semiconductors
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
MARKING
CODE
V
Z
at I
ZT1
V
MIN.
BZX84B2V4-G
BZX84B2V7-G
BZX84B3V0-G
BZX84B3V3-G
BZX84B3V6-G
BZX84B3V9-G
BZX84B4V3-G
BZX84B4V7-G
BZX84B5V1-G
BZX84B5V6-G
BZX84B6V2-G
BZX84B6V8-G
BZX84B7V5-G
BZX84B8V2-G
BZX84B9V1-G
BZX84B10-G
BZX84B11-G
BZX84B12-G
BZX84B13-G
BZX84B15-G
BZX84B16-G
BZX84B18-G
BZX84B20-G
BZX84B22-G
BZX84B24-G
BZX84B27-G
BZX84B30-G
BZX84B33-G
BZX84B36-G
BZX84B39-G
BZX84B43-G
BZX84B47-G
BZX84B51-G
BZX84B56-G
BZX84B62-G
BZX84B68-G
BZX84B75-G
H50
H51
H52
H53
H54
H55
H56
H57
H58
H59
H60
H61
H62
H63
H64
H65
H66
H67
H68
H69
H70
H71
H72
H73
H74
H75
H76
H77
H78
H79
H80
H81
H82
H83
H84
H85
H86
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.0
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
TEST CURRENT
I
ZT1
mA
I
ZT2
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
Z
ZK
at
I
ZT2
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Rev. 1.2, 28-Feb-13
Document Number: 83458
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-G-Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Ω
100
T
J
= 25 °C
5
4
Vishay Semiconductors
I
F
10
1
10
-1
10
-2
10
-3
10
-4
T
J
= 100 °C
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
T
J
= 25 °C
10
5
4
3
2
10
-5
0
18114
1
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
V
F
10
I
Z
2
5
100 mA
Fig. 1 - Forward Characteristics
mW
500
Fig. 4 - Dynamic Resistance vs. Zener Current
Ω
10
3
7
5
4
T
j
= 25 °C
400
R
zj
3
2
P
tot
300
47 + 51
43
39
36
10
2
7
200
5
4
3
2
100
0
0
18115
100
200 °C
10
0.1
18120
2
3
4 5
1
2
3 4 5
T
amb
I
Z
10
mA
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Ω
1000
5
4
3
2
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
10
3
T
J
= 25 °C
r
zj
R
zth
5
4
3
2
R
zth
= R
thA
x V
Z
x
Δ
V
Z
Δ
T
j
100
5
4
3
2
10
2
5
4
3
2
10
5
4
3
2
2.7
3.6
4.7
5.1
5.6
10
5
4
3
2
negative
positive
1
0.1
18117
2
5
1
1
18121
2
3
4 5
1
2
5
10
I
Z
2
5
100 mA
10
2
3 4 5
100 V
V
Z
at I
Z
= 5 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.2, 28-Feb-13
Document Number: 83458
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-G-Series
www.vishay.com
Vishay Semiconductors
mV/°C
100
I
Z
= 5 mA
Ω
100
7
5
4
R
zj
3
2
Δ
V
Z
Δ
T
j
80
60
10
7
5
4
3
2
40
20
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
1
10
2
0
0
18125
3 4 5
100 V
20
40
60
80
100 V
18122
V
Z
V
Z
Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
mV/°C
25
20
15
10
5
0
-5
1
18123
2
3
4 5
Δ
V
Z
Δ
T
j
5 mA
I
Z
= 1 mA
20 mA
7
Δ
V
Z
6
5
4
3
2
1
0
-1
51
43
36
I
Z
= 2 mA
0
20
40
60
80 100 120
T
j
140 °C
10
2
3 4 5
100 V
V
Z
18126
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100 V
T
j
V
Z
at I
Z
= 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 1.2, 28-Feb-13
Document Number: 83458
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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