JAN2N3821 datasheet, PDF - EEWORLD Datasheet

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JAN2N3821: DescriptionVHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF; CategoryDiscrete semiconductor The transistor; File Size46KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JAN2N3821 Overview

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF

JAN2N3821 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	_compli
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
Guideline	MIL-19500/375
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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TECHNICAL DATA

N-CHANNEL J-FET DEPLETION MODE

Qualified per MIL-PRF-19500/375

Devices

2N3821

2N3822

2N3823

Qualified Level

JANTX

JANTXV

MAXIMUM RATINGS

Parameters / Test Conditions

Gate-Source Voltage

Drain-Source Voltage

Drain-Gate Voltage

Gate Current

Power Dissipation

T

A

= +25

0

C

(1)

Operating Junction & Storage Temperature Range

Symbol

V

GSR

V

DS

V

DG

I

GF

P

T

j

, T

stg

2N3821

2N3822

50

2N3823

30

Unit

V

mA

mW

0

C

10

300

-55 to +200

TO-72*

(TO-206AF)

*See appendix A for

package outline

(1) Derate linearly 1.7 mW/

0

C for T

A

+25

0

C.

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Parameters / Test Conditions

Symbol

Gate-Source Breakdown Voltage

V

DS

= 0, I

G

= 1.0

µAdc

Gate Reverse Current

V

DS

= 0, V

GS

= 30 Vdc

V

DS

= 0, V

GS

= 20 Vdc

Zero-Gate-Voltage Drain Current

V

GS

= 0, V

DS

= 15 Vdc

2N3821, 2N3822

2N3823

2N3821, 2N3822

2N3823

2N3821

2N3822

2N3823

2N3821

2N3822

2N3823

2N3821

2N3822

2N3823

V

(BR)GSSR

Min.

50

30

Max.

Units

Vdc

ηA

I

GSSR

0.1

0.5

2.0

4.0

0.5

1.0

2.5

10

20

2.0

4.0

7.5

4.0

6.0

8.0

I

DSS

mA

Gate-Source Voltage

V

DS

= 15 Vdc, I

D

= 50 µAdc

V

DS

= 15 Vdc, I

D

= 200 µAdc

V

DS

= 15 Vdc, I

D

= 400 µAdc

Gate-Source Cutoff Voltage

V

DS

= 15 Vdc, I

D

= 0.5

ηAdc

V

GS

Vdc

V

GS(off)

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JAN2N3821 Related Products

	JAN2N3821	JAN2N3822	JAN2N3823
Description	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	TO-72, 4 PIN
Contacts	4	4	4
Reach Compliance Code	_compli	_compli	not_compliant
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	50 V	50 V	30 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3 pF	3 pF	2 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF	TO-206AF	TO-206AF
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Guideline	MIL-19500/375	MIL-19500/375	MIL-19500/375
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	Contains lead	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
Base Number Matches	1	1	-

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