JAN2N3823 datasheet, PDF - EEWORLD Datasheet

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JAN2N3823: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size46KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JAN2N3823 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN

JAN2N3823 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1689292748
Parts packaging code	BCY
package instruction	TO-72, 4 PIN
Contacts	4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	2 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
Guideline	MIL-19500/375
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON

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TECHNICAL DATA

N-CHANNEL J-FET DEPLETION MODE

Qualified per MIL-PRF-19500/375

Devices

2N3821

2N3822

2N3823

Qualified Level

JANTX

JANTXV

MAXIMUM RATINGS

Parameters / Test Conditions

Gate-Source Voltage

Drain-Source Voltage

Drain-Gate Voltage

Gate Current

Power Dissipation

= +25

(1)

Operating Junction & Storage Temperature Range

Symbol

GSR

, T

stg

2N3821

2N3822

2N3823

Unit

300

-55 to +200

TO-72*

(TO-206AF)

*See appendix A for

package outline

(1) Derate linearly 1.7 mW/

C for T

+25

ELECTRICAL CHARACTERISTICS (T

= 25

C unless otherwise noted)

Parameters / Test Conditions

Symbol

Gate-Source Breakdown Voltage

= 0, I

= 1.0

µAdc

Gate Reverse Current

= 0, V

= 30 Vdc

= 0, V

= 20 Vdc

Zero-Gate-Voltage Drain Current

= 0, V

= 15 Vdc

2N3821, 2N3822

2N3823

2N3821, 2N3822

2N3823

2N3821

2N3822

2N3823

2N3821

2N3822

2N3823

2N3821

2N3822

2N3823

(BR)GSSR

Min.

Max.

Units

Vdc

ηA

GSSR

0.1

0.5

2.0

4.0

0.5

1.0

2.5

2.0

4.0

7.5

4.0

6.0

8.0

DSS

Gate-Source Voltage

= 15 Vdc, I

= 50 µAdc

= 15 Vdc, I

= 200 µAdc

= 15 Vdc, I

= 400 µAdc

Gate-Source Cutoff Voltage

= 15 Vdc, I

= 0.5

ηAdc

Vdc

GS(off)

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JAN2N3823 Related Products

	JAN2N3823	JAN2N3822	JAN2N3821
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	BCY	BCY	BCY
package instruction	TO-72, 4 PIN	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Contacts	4	4	4
Reach Compliance Code	not_compliant	_compli	_compli
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	30 V	50 V	50 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	2 pF	3 pF	3 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF	TO-206AF	TO-206AF
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Guideline	MIL-19500/375	MIL-19500/375	MIL-19500/375
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Is it lead-free?	-	Contains lead	Contains lead
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	-	1	1

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