SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
KTA2014V
EPITAXIAL PLANAR PNP TRANSISTOR
E
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
Complementary to KTC4075V.
Very Small Package.
A
G
H
1
B
3
K
P
P
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-50
-50
-5
-150
-30
100
150
-55 150
UNIT
V
V
V
mA
mA
mW
C
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
Type Name
h
FE
Rank
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10k
Note : h
FE
Classification O(2):70 140, Y(4):120 240, GR(6):200
400
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4
1.0
J
D
Low Noise : NF=1dB(Typ.), 10dB(Max.).
2
DIM MILLIMETERS
_
A
1.2 +0.05
_
B
0.8 +0.05
_
C
0.5 + 0.05
_
D
0.3 + 0.05
_
E
1.2 + 0.05
_
G
0.8 + 0.05
H
0.40
_
J
0.12 + 0.05
_
K
0.2 + 0.05
P
5
MAX.
-0.1
-0.1
400
-0.3
-
7
10
UNIT
A
A
V
MHz
pF
dB
2001. 7. 20
Revision No : 0
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