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8TQ100GSTRL

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, PLASTIC, SMD-220, D2PAK-3
CategoryDiscrete semiconductor    diode   
File Size177KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

8TQ100GSTRL Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, PLASTIC, SMD-220, D2PAK-3

8TQ100GSTRL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.58 V
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current850 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin PD-20837 rev. A 01/06
8TQ...GS
SCHOTTKY RECTIFIER
8 Amp
I
F(AV)
= 8 Amp
V
R
= 80 - 100V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 8 Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The 8TQ Schottky rectifier series has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse
battery protection.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
175° C T
J
operation
Values
8
80 - 100
850
0.58
- 55 to 175
Case Styles
8TQ... GS
Base
Cathode
1
3
Cathode
Anode
D
2
PAK
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