DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3356
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., G
a
= 11 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
2SC3356
2SC3356-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
200
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10209EJ01V0DS (1st edition)
(Previous No. P10356EJ5V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1985, 2003
2SC3356
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1.0 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 20 mA
–
–
50
–
–
120
1.0
1.0
250
µ
A
µ
A
–
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
–
–
–
−
7
11.5
1.1
0.55
–
–
2.0
1.0
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
R23/Q
R23
50 to 100
Note
R24/R
R24
Note
R25/S
R25
Note
80 to 160
125 to 250
Note
Old Specification/New Specification
2
Data Sheet PU10209EJ01V0DS
2SC3356
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
250
Total Power Dissipation P
tot
(mW)
Free air
200
150
1
100
0.5
50
0
25
50
75
100
125
150
0.3
0.2
0.5
1
2
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 10 V
5
V
CE
= 10 V
DC Current Gain h
FE
100
2
1
0.5
50
20
0.2
0.1
0.1
10
0.5
1
5
10
50
0.5
1
5
10
50 100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
Insertion Power Gain |S
21e
|
2
(dB)
25
MAG
20
|S
21e
|
2
15
V
CE
= 10 V
f = 1 GHz
10
10
5
5
V
CE
= 10 V
I
C
= 20 mA
0
0.05
0.1
0.2
0.5
1
2
0
0.5
1
5
10
50 70
Frequency f (GHz)
Collector Current I
C
(mA)
Data Sheet PU10209EJ01V0DS
3
2SC3356
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
Noise Figure NF (dB)
NOISE FIGURE, INSERTION POWER GAIN
vs. COLLECTOR TO EMITTER VOLTAGE
5
f = 1 GHz
I
C
= 20 mA
Noise Figure NF (dB)
4
|S
21e
|
2
3
12
5
4
3
2
1
0
0.5
1
5
10
50 70
9
2
NF
1
6
3
0
10
0
2
4
6
8
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10209EJ01V0DS
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 10 V
f = 1 GHz
15
2SC3356
SMITH CHART
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V, 200 MHz Step
0
.09
0.
0. 06
44
5
0.
07
0.
3
4
0.
0
13
1.6
1
0.7
8
0.0 2
0.4
0.9
1.0
0.8
1.2
0.4
1
0.10
0.40
110
0.11
0.39
100
0.12
0.38
0.13
0.37
90
0.14
0.36
80
0.15
0.35
70
1.4
0.1
6
0.3
4
20
0.6
60
1.8
0.1
0.3
7
3
0.
2.0
0.2
50
0.
18
32
19
0.
3 1
0.
0.0
0.4
5
5
POS
14
ITIV
0
ER
EA
CT
+
A
–– JX
NCE
Z
O
––
CO
M
PO
N
T
EN
0.4
0
0.2 0
0.3
40
WAVELE
NGTH
S
0.02
TOWARD
0.0
GENE
0.48
.47
3
RA
0
W
FLECTION
COEFFCIENT
0.4
0.0
TOR
6
IN
DE
7
.03
THS
TO
GLE
OF
RE
0
NG
4
GRE
AN
0.4
0.4
ES
0
4
VELE
−
160
6
0.0
A
W
15
0
)
(
0.01
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
0
0.49
0.48
0.01
2
RD
LOAD
0.0
A
0.1
0.4
0.6
0.
8
S
22e
0
1.0
ENT
ON
MP
0.2
CO
CE
AN
CT
JX –
A
−
––
O
RE
–Z
E
IV
AT
0
)
5
−
1
0.3
(
5
0.4
5
0.0
44
0.
06
40
0.
−
1
4
0.
I
C
= 5 mA
0.
1.6
0.
5
2.0
0.6
1.8
0.7
0.8
0.9
1.2
1.4
1.0
S
21e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
120˚
0.2 GHz
60˚
S
12e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
120˚
2.0 GHz
60˚
150˚
S
21e
30˚
150˚
180˚
2.0 GHz
5
10
15
20
0˚ 180˚
–150˚
–30˚
–150˚
–120˚
–90˚
–60˚
–120˚
–90˚
Data Sheet PU10209EJ01V0DS
3.
0
0.2 GHz
5.0
I
C
= 20 mA
0.8
I
C
= 5 mA
0.2 GHz
4.0
1.
20
50
REACTANCE COMPONENT
R
––––
0.2
Z
O
(
)
10
32
0.
18
−
5
0
4
0.3
6
3
0.1
0.3
7
0.1
60
−
0.35
0.15
−
70
0.36
0.14
−
80
0.6
0.37
0.13
0.4
0.4
S
11e
0
1.
0.2 GHz I
C
= 20 mA
0.8
0.6
0.2
0.2
−90
0.38
0.39
0.12
0.11
−
100
0.40
0.10
−
11
0
0.4
1
0.0
0.4
9
0.0
2
20
8
−
1
NE
G
−
1
0.
4
0.
3
07
30
0.
4
0.6
0.8
0
1.
0
3.
1
0.2
9
0.2
30
0.3
4.0
6.0
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
2.0 GHz
0.2
10
0.1
20
50
0.25
0.25
0
0.3
0.2
0
0
0.26
0.27
0.24
0
.28
0.23
0
−
10
0.2
.22
9
−
20
0.2
1
−
3
0
−
4
0
0.
0.
31
19
S
12e
30˚
0.2 GHz
0.05
0.1
0.15
0.2 0.25
0˚
–30˚
–60˚
5
Embedded System
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