IR590SG06H datasheet, PDF - EEWORLD Datasheet

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IR590SG06H: DescriptionSilicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER; CategoryAnalog mixed-signal IC Trigger device; File Size81KB，3 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IR590SG06H Overview

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

IR590SG06H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	WAFER
package instruction	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
Configuration	SINGLE
Maximum DC gate trigger current	140 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	180 mA
JESD-30 code	O-XUUC-N
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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Bulletin I0213J 10/00

IR590SG..HCB

PHASE CONTROL THYRISTORS

Junction Size:

Wafer Size:

V

RRM

Class:

Passivation Process:

Reference IR Packaged Part:

Square 590 mils

4"

600 to 1200 V

Glassivated MESA

181RKI Series

Major Ratings and Characteristics

Parameters

V

TM

Maximum On-state Voltage

Units

1.2 V

600 to 1200 V

140 mA

2V

5 to 180 mA

900 mA

Test Conditions

T

J

= 25°C, I

T

= 25 A

T

J

= 25°C, I

DRM

/I

RRM

= 100 µA

(1)

V

DRM

/ V

RRM

Direct and Reverse Breakdown Voltage

I

GT

V

GT

I

H

I

L

Max. Required DC Gate Current to Trigger

Max. Required DC Gate Voltage to Trigger

Holding Current Range

Maximum Latching Current

T

J

= 25° C, anode supply = 6 V, resistive load

T

J

= 25° C, anode supply = 6 V, resistive load

Anode supply = 6 V, resistive load

(1)

Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

590 x 590 mils (see drawing)

100 mm, with std. <110> flat

370 µm ± 10 µm

130 µm

0.25 mm diameter minimum

See drawing

Storage in original container, in dessicated

nitrogen, with no contamination

IR590SG06H Related Products

	IR590SG06H	IR590SG08HCB	IR590SG08H	IR590SG06HCB	IR590SG12H	IR590SG12HCB
Description	Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER	Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2	Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2	Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	WAFER	DIE	DIE	WAFER	WAFER	WAFER
package instruction	UNCASED CHIP, O-XUUC-N	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, O-XUUC-N	UNCASED CHIP, O-XUUC-N	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	140 mA	140 mA	140 mA	140 mA	140 mA	140 mA
Maximum DC gate trigger voltage	2 V	2 V	2 V	2 V	2 V	2 V
Maximum holding current	180 mA	180 mA	180 mA	180 mA	180 mA	180 mA
JESD-30 code	O-XUUC-N	S-XUUC-N2	S-XUUC-N2	O-XUUC-N	O-XUUC-N	O-XUUC-N
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	SQUARE	SQUARE	ROUND	ROUND	ROUND
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Off-state repetitive peak voltage	600 V	800 V	800 V	600 V	1200 V	1200 V
Repeated peak reverse voltage	600 V	800 V	800 V	600 V	1200 V	1200 V
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1	1	1

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