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IR590SG08HCB

Description
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2
CategoryAnalog mixed-signal IC    Trigger device   
File Size81KB,3 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IR590SG08HCB Overview

Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2

IR590SG08HCB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeDIE
package instructionUNCASED CHIP, S-XUUC-N2
Contacts2
Reach Compliance Codecompliant
ConfigurationSINGLE
Maximum DC gate trigger current140 mA
Maximum DC gate trigger voltage2 V
Maximum holding current180 mA
JESD-30 codeS-XUUC-N2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
Bulletin I0213J 10/00
IR590SG..HCB
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Reference IR Packaged Part:
Square 590 mils
4"
600 to 1200 V
Glassivated MESA
181RKI Series
Major Ratings and Characteristics
Parameters
V
TM
Maximum On-state Voltage
Units
1.2 V
600 to 1200 V
140 mA
2V
5 to 180 mA
900 mA
Test Conditions
T
J
= 25°C, I
T
= 25 A
T
J
= 25°C, I
DRM
/I
RRM
= 100 µA
(1)
V
DRM
/ V
RRM
Direct and Reverse Breakdown Voltage
I
GT
V
GT
I
H
I
L
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
Holding Current Range
Maximum Latching Current
T
J
= 25° C, anode supply = 6 V, resistive load
T
J
= 25° C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
590 x 590 mils (see drawing)
100 mm, with std. <110> flat
370 µm ± 10 µm
130 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination

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Description Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2 Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2 Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code DIE WAFER DIE WAFER WAFER WAFER
package instruction UNCASED CHIP, S-XUUC-N2 UNCASED CHIP, O-XUUC-N UNCASED CHIP, S-XUUC-N2 UNCASED CHIP, O-XUUC-N UNCASED CHIP, O-XUUC-N UNCASED CHIP, O-XUUC-N
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current 140 mA 140 mA 140 mA 140 mA 140 mA 140 mA
Maximum DC gate trigger voltage 2 V 2 V 2 V 2 V 2 V 2 V
Maximum holding current 180 mA 180 mA 180 mA 180 mA 180 mA 180 mA
JESD-30 code S-XUUC-N2 O-XUUC-N S-XUUC-N2 O-XUUC-N O-XUUC-N O-XUUC-N
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape SQUARE ROUND SQUARE ROUND ROUND ROUND
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Off-state repetitive peak voltage 800 V 600 V 800 V 600 V 1200 V 1200 V
Repeated peak reverse voltage 800 V 600 V 800 V 600 V 1200 V 1200 V
surface mount YES YES YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1
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