MCC 312
MCD 312
Thyristor Modules
Thyristor/Diode Modules
V
RSM
V
DSM
V
1300
1500
1700
1900
V
RRM
V
DRM
V
1200
1400
1600
1800
Type
I
TRMS
=
2x 520 A
2x 320 A
I
TAVM
=
V
RRM
= 1200-1800 V
3
2
7
6
5
4
MCC 312-12io1
MCC 312-14io1
MCC 312-16io1
MCC 312-18io1
MCD 312-12io1
MCD 312-14io1
MCD 312-16io1
MCD 312-18io1
1
E72873
Symbol
Conditions
Maximum Ratings
520
320
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
9200
10100
8000
8800
423 000
423 000
320 000
321 000
100
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
Features
3
6 7 1
5 4 2
I
TRMS
, I
FRMS
T
VJ
= T
VJM
I
TAVM
, I
FAVM
T
C
= 85°C; 180° sine
I
TSM
, I
FSM
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
I
2
t
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
(di/dt)
cr
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
MCC
3
1
5 4 2
MCD
T
VJ
= T
VJM
;
repetitive, I
T
= 960 A
f = 50 Hz; t
p
= 200 µs;
V
D
=
2
/
3
V
DRM
;
I
G
= 1 A;
di
G
/dt = 1 A/µs
non repetitive, I
T
= I
TAVM
500
1000
120
60
20
10
-40...+140
140
-40...+125
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
Nm
Nm
g
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
;
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
; t
p
= 30 µs
I
T
= I
T(AV)M
; t
p
= 500 µs
• International standard package
•
Direct Copper Bonded
Al
2
O
3
-ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Keyed gate/cathode twin pins
Applications
• Motor control, softstarter
• Power converter
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Solid state switches
Advantages
• Simple mounting
• Improved temperature and power
cycling
• Reduced protection circuits
50/60 Hz, RMS
I
ISOL
< 1 mA
t = 1 min
t=1s
3000
3600
4.5 - 7
11 - 13
750
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20130813c
© 2013 IXYS All rights reserved
1-5
MCC 312
MCD 312
Symbol
I
RRM
, I
DRM
V
T
, V
F
V
T0
r
t
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Conditions
V
R
/ V
D
= V
RRM
/ V
DRM
I
T
; I
F
= 600 A
For power-loss calculations only
T
VJ
= T
VJM
V
D
= 6 V
V
D
= 6 V
V
D
=
2
/
3
V
DRM
;
t
p
= 30 µs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
V
D
= 6 V; R
GK
=
∞;
V
D
= ½V
DRM
I
G
= 1 A; di
G
/dt = 1 A/µs
V
D
=
2
/
3
V
DRM
dv/dt = 50 V/µs; -di/dt = 10 A/µs
I
T
= 300 A; V
R
= 100 V; t
p
= 200 µs
I
T
= 300 A; -di/dt = 50 A/µs
per thyristor; DC current
per module
per thyristor; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= T
VJM
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= T
VJM
200
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristic Values
typ.
max.
40
1.32
0.8
0.68
2
3
150
220
0.25
10
200
150
2
mA
V
V
mW
V
V
mA
mA
V
mA
mA
mA
µs
µs
typ.
limit
10
1: I
GT
, T
VJ
= 130°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
G
[V]
1
1
2
3
4
5
6
I
GD
, T
VJ
= 130°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
0.1
10
-3
10
-2
10
-1
10
0
10
1
10
2
I
G
[A]
Fig. 3 Surge overload current
I
TSM/FSM
: Crest value, t: duration
100
T
VJ
= 25°C
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
T
VJ
= T
VJM
760
275
0.12
0.06
0.16
0.08
12.7
9.6
50
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
t
gd
[μs]
10
1
10
0.01
100
0.1
I
G
[A]
1000
1
10000
10
Fig. 2 Gate trigger delay time
IXYS reserves the right to change limits, test conditions and dimensions.
20130813c
© 2013 IXYS All rights reserved
2-5
MCC 312
MCD 312
Dimensions in mm (1 mm = 0.0394“)
M8 x 20
SW 13
2.8 x 0.8
52
+0
-1,4
49
2
32
+0
-1,9
10
20
22.5
35
28.5
1
2
6.2
80
92
115
45 67
18
3
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)
IXYS reserves the right to change limits, test conditions and dimensions.
5
20130813c
38
50
3-5
© 2013 IXYS All rights reserved
43
45
MCC 312
MCD 312
10000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 140°C
10
6
V
R
= 0 V
600
500
T
VJ
= 45°C
8000
I
T(F)SM
6000
I
2
dt
10
5
T
VJ
= 140°C
I
400
F(T)AVM
DC
180° sin
120°
60°
30°
[A]
4000
[A
2
s]
[A]
300
200
2000
100
10
4
0
0
0.001
0.01
0.1
1
t [s]
Fig. 3 Surge overload current
I
T(F)SM
:Crest value, t: duration
600
1
t [ms]
2
Fig. 4 I dt versus time
10
0
T
C
[°C]
Fig. 4a Max. forward current
at case temperature
25
50
75
100 125 150
R
thKA
K/W
500
400
300
P
tot
0.06
0.1
0.2
0.3
0.4
0.6
0.8
DC
180° sin
120°
60°
30°
[W]
200
100
0
0
100 200 300 400 500
0
25
50
75
100
125
150
I
FAVM/TAVM
[A]
T
A
[°C]
Fig. 5 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
3000
R
thKA
K/W
2500
2000
P
tot
1500
1000
500
0
Circuit
B6
3xMCC312 or
3xMCD312
0.02
0.04
0.07
0.1
0.15
0.2
0.3
[W]
0
200
400
600
800
0
25
50
75
100
125
150
I
DAVM
[A]
T
A
[°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
IXYS reserves the right to change limits, test conditions and dimensions.
20130813c
© 2013 IXYS All rights reserved
4-5
MCC 312
MCD 312
3000
R
thKA
K/W
2500
P
tot
[W]
2000
1500
0.02
0.04
0.07
0.1
0.15
0.2
0.3
Circuit
W3
3xMCC312 or
3xMCD312
1000
500
0
0
200
400
600
A
0
25
50
75
100
125
150
I
RMS
[A]
T
A
[°C]
Fig. 7 Three phase AC-controller: Power dissipation versus
R
MS
output current and ambient temperature
0.20
R
thJC
for various conduct. angles d:
d
DC
180°
120°
60°
30°
i
1
2
3
4
R
thJC
(K/W)
0.120
0.128
0.135
0.153
0.185
R
thi
(K/W)
0.0058
0.031
0.072
0.0112
t
i
(s)
0.00054
0.098
0.54
12
0.15
Z
thJC
0.10
[K/W]
0.05
30°
60°
120°
180°
DC
Constants for Z
thJC
calculation:
0.00
10
-3
10
-2
10
-1
t
[s]
10
0
10
1
10
2
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)
R
thJK
for various conduct. angles d:
d
DC
180°
120°
60°
30°
30°
60°
120°
180°
DC
0.25
0.20
0.15
Z
thJK
0.10
R
thJK
(K/W)
0.160
0.168
0.175
0.193
0.225
R
thi
(K/W)
0.0058
0.031
0.072
0.0112
0.0400
t
i
(s)
0.00054
0.0980
0.540
1200
12
Constants for Z
thJK
calculation:
i
1
2
3
4
5
[K/W]
0.05
0.00
10
-3
t [s]
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode)
10
-2
10
-1
10
0
10
1
10
2
IXYS reserves the right to change limits, test conditions and dimensions.
20130813c
© 2013 IXYS All rights reserved
5-5
京公网安备 11010802033920号
EEWORLD
