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IRF840LCLTRLPBF

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size458KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

IRF840LCLTRLPBF Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

IRF840LCLTRLPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
PD- 95759
IRF840LCSPbF
IRF840LCLPbF
•
Lead-Free
Document Number: 91068
www.vishay.com
1
8/24/04

IRF840LCLTRLPBF Related Products

IRF840LCLTRLPBF IRF840LCLTRRPBF
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 8 A 8 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Base Number Matches 1 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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