|
IRF840LCLTRLPBF |
IRF840LCLTRRPBF |
| Description |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| Is it Rohs certified? |
conform to |
conform to |
| Maker |
Vishay |
Vishay |
| Reach Compliance Code |
unknown |
unknown |
| Configuration |
Single |
Single |
| Maximum drain current (Abs) (ID) |
8 A |
8 A |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code |
e3 |
e3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
125 W |
125 W |
| surface mount |
NO |
NO |
| Terminal surface |
Matte Tin (Sn) |
Matte Tin (Sn) |
| Base Number Matches |
1 |
1 |