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FDD6690A
July 2003
FDD6690A
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Features
•
46 A, 30 V
R
DS(ON)
= 12 mΩ @ V
GS
= 10 V
R
DS(ON)
= 14 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast Switching Speed
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
D
G
S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Units
V
V
A
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
46
12
100
56
3.3
1.5
–55 to +175
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD6690A
Device
FDD6690A
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2003
Fairchild Semiconductor Corp.
FDD6690A Rev EW)
FDD6690A
Electrical Characteristics
Symbol
E
AS
I
AS
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Test Conditions
Single Pulse, V
DD
= 15 V, I
D
= 12A
Min
Typ
Max Units
180
12
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
V
GS
= 0 V,
I
D
= 250
µA
30
24
1
±100
V
mV/°C
µA
nA
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
V
GS
= 10 V,
I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 12 A,T
J
=125°C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 12 A
1
1.9
–5
7.7
9.9
11.4
3
V
mV/°C
mΩ
12
14
19
I
D(on)
g
FS
50
47
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
1230
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
325
150
f = 1.0 MHz
1.5
pF
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
7
29
12
13
V
DS
= 15V,
V
GS
= 5 V
I
D
= 12 A,
3.5
5.1
19
13
46
21
18
ns
ns
ns
ns
nC
nC
nC
FDD6690A Rev. EW)
FDD6690A
Electrical Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
2.3
A
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 12 A,
I
S
= 2.3 A
(Note 2)
d
iF
/d
t
= 100 A/µs
0.76
24
13
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 45°C/W when mounted on a
1in pad of 2 oz copper
2
b) R
θJA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
P
D
R
DS(ON)
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD6690A Rev. EW)
FDD6690A
Typical Characteristics
100
1.8
V
GS
= 10.0V
6.0V
4.5V
5.0V
4.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.5V
1.6
80
I
D
, DRAIN CURRENT (A)
60
1.4
4.0V
4.5V
5.0V
6.0V
3.5V
40
1.2
1
10.0V
20
3.0V
0.8
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0
20
40
I
D
, DRAIN CURRENT (A)
60
80
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.03
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 12A
V
GS
= 10V
1.4
R
DS(ON)
, ON-RESISTANCE (OHM)
0.025
I
D
= 6A
1.2
0.02
T
A
= 125 C
0.015
o
1
T
A
= 25
o
C
0.01
0.8
0.6
-50
-25
0
25
50
75
100
o
T
J
, JUNCTION TEMPERATURE ( C)
125
150
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
I
S
, REVERSE DRAIN CURRENT (A)
90
V
DS
= 5V
75
I
D
, DRAIN CURRENT (A)
60
45
30
15
0
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
4.5
25
o
C
T
A
=-55
o
C
125 C
o
V
GS
= 0V
100
10
1
0.1
0.01
0.001
o
T
A
= 125 C
25
o
C
-55
o
C
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6690A Rev. EW)
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