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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
PBSS4240DPN
40 V low V
CEsat
NPN/PNP
transistor
Product data sheet
2003 Feb 20
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
FEATURES
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability I
C
and I
CM
•
High collector current gain h
FE
at high I
C
•
High efficiency leading to reduced heat generation
•
Reduced printed-circuit board area requirements.
APPLICATIONS
•
Power management:
– Complementary MOSFET driver
– Dual supply line switching.
•
Peripheral driver:
– Half and full bridge motor drivers
– Multi-phase stepper motor driver.
DESCRIPTION
NPN/PNP low V
CEsat
transistor pair in a SOT457 (SC-74)
plastic package.
MARKING
TYPE NUMBER
PBSS4240DPN
MARKING CODE
M3
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
V
CEO
I
C
I
CRP
I
CM
R
CEsat
emitter-collector
voltage
QUICK REFERENCE DATA
PBSS4240DPN
MAX.
SYMBOL
PARAMETER
NPN PNP
40
1.35
2
3
200
−40
−1.1
−2
−3
260
V
A
A
A
mΩ
UNIT
collector current (DC)
repetitive peak
collector current
peak collector current
equivalent
on-resistance
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
6
handbook, halfpage
5
4
6
5
4
TR2
TR1
1
Top view
2
3
MAM445
1
2
3
Fig.1
Simplified outline SOT457 (SC-74) and
symbol.
2003 Feb 20
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
note 1
single peak
−
−
−
−
T
amb
≤
25
°C;
note 2
T
amb
≤
25
°C;
note 3
T
amb
≤
25
°C;
note 1
T
stg
T
j
T
amb
Per device
P
tot
Notes
total power dissipation
T
amb
≤
25
°C;
note 2
−
storage temperature
junction temperature
operating ambient temperature
−
−
−
−65
−
−65
PBSS4240DPN
MIN.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
NPN
PNP
I
CRP
I
CM
I
B
I
BM
P
tot
repetitive peak collector current
peak collector current
base current (DC)
peak base current
total power dissipation
open emitter
open base
open collector
40
40
5
1.35
−1.1
2
3
300
1
370
310
1.1
+150
150
+150
V
V
V
A
A
A
A
mA
A
mW
mW
W
°C
°C
°C
600
mW
1. Operated under pulsed conditions: duty cycle
δ ≤
20%; pulse width tp
≤
10 ms; mounting pad for collector standard
footprint.
2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1
in free air; note 2
340
110
K/W
K/W
PARAMETER
CONDITIONS
VALUE
UNIT
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
2. Operated under pulsed conditions: pulse width t
p
≤
10 ms; duty cycle
δ ≤
0.20; mounting pad for collector standard
footprint.
2003 Feb 20
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
NPN/PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
300
150
−
PBSS4240DPN
TYP.
−
−
−
−
−
−
−
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
f
T
C
c
TR1 (NPN)
h
FE
DC current gain
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
V
CE
= 5 V; I
C
= 2 A; note 1
V
CEsat
collector-emitter saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA; note 1
V
BEsat
V
BEon
R
CEsat
TR2 (PNP)
h
FE
DC current gain
V
CE
=
−5
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CE
=
−5
V; I
C
=
−2
A; note 1
V
CEsat
saturation voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
I
C
=
−2
A; I
B
=
−200
mA; note 1
V
BEsat
V
BEon
R
CEsat
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
I
C
=
−1
A; I
B
=
−50
mA
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−1
A; I
B
=
−100
mA; note 1
300
250
160
50
−
−
−
−
−
−
−
−
−
−
−
−90
−100
−180
−400
−
−
−
800
−
−
−
−120
−145
−260
−530
−1.1
−1
260
mV
mV
mV
mV
V
V
mΩ
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
I
C
= 1 A; I
B
= 100 mA
V
CE
= 5 V; I
C
= 1 A
I
C
= 1 A; I
B
= 100 mA
300
200
75
−
−
−
−
−
−
−
−
−
−
60
80
150
300
−
−
−
900
−
−
75
100
200
400
1.2
1.1
200
mV
mV
mV
mV
V
V
mΩ
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
transition frequency
collector capacitance
V
CB
= 40 V; I
E
= 0
V
CB
= 40 V; I
E
= 0; T
j
= 150
°C
V
CE
= 30 V; I
B
= 0
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 mA
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
100
50
100
100
−
−
12
MHz
pF
nA
μA
nA
nA
2003 Feb 20
4
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