3N225A datasheet, PDF - EEWORLD Datasheet

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Datasheet> All Categories > Discrete semiconductor> The transistor> 3N225A

3N225A: DescriptionUHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size38KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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3N225A Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, 4 PIN

3N225A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	not_compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.05 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

3N225A Related Products

	3N225A	2N5549	3N206	3N204
Description	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72, 4 PIN	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-18	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	_compli	not_compliant	not_compliant
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
FET technology	METAL-OXIDE SEMICONDUCTOR	JUNCTION	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF	2 pF	0.03 pF	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	O-MBCY-W4	O-MBCY-W3	O-MBCY-W4	O-MBCY-W4
Number of components	1	1	1	1
Number of terminals	4	3	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W	0.36 W	0.36 W	0.36 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W4	-
Minimum drain-source breakdown voltage	20 V	-	25 V	25 V
Maximum drain current (Abs) (ID)	0.05 A	-	0.05 A	0.05 A
Shell connection	-	GATE	SOURCE AND SUBSTRATE	SOURCE AND SUBSTRATE
JEDEC-95 code	-	TO-18	TO-72	TO-72
transistor applications	-	SWITCHING	AMPLIFIER	AMPLIFIER

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