BFS17W
NPN Silicon RF Transistor
•
For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
•
Pb-free (RoHS compliant) package
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFS17W
Marking
MCs
Pin Configuration
1=B
2=E
3=C
Package
SOT323
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
T
J
T
A
T
Stg
Symbol
R
thJS
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
f
= 10 MHz
Total power dissipation
1)
T
S
≤
93 °C
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Value
≤
205
V
mA
mW
°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
K/W
S is measured on the collector lead at the soldering point to the pcb
2
For calculation of
R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-07-20
BFS17W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2.5 V,
I
C
= 0
DC current gain
I
C
= 2 mA,
V
CE
= 1 V, pulse measured
I
C
= 25 mA,
V
CE
= 1 V, pulse measured
Collector-emitter saturation voltage
I
C
= 10 mA,
I
B
= 1 mA
V
CEsat
h
FE
40
20
-
-
70
0.1
150
-
0.4
V
-
I
EBO
I
CBO
-
-
-
-
-
-
0.05
10
100
µA
V
(BR)CEO
15
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
2011-07-20
BFS17W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
(verified by random sampling)
GHz
Transition frequency
f
T
I
C
= 2 mA,
V
CE
= 5 V,
f
= 200 MHz
I
C
= 25 mA,
V
CE
= 5 V,
f
= 200 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 5 V,
Z
S
= 50
Ω,
f
= 800 MHz
Transducer gain
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω,
f
= 500 MHz
Third order intercept point at output
V
CE
= 5 V,
I
C
= 20 mA,
f
= 800 MHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
1dB compression point
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω,
f
= 800 MHz
P
-1dB
-
11
-
-
IP
3
-
22.5
-
dBm
|S
21e
|
2
-
14
-
dB
NF
min
-
3.5
5
dB
C
eb
-
0.9
1.45
C
ce
-
0.3
-
C
cb
1
1.3
-
1.4
2.5
0.55
-
-
0.8
pF
3
2011-07-20
BFS17W
Total power dissipation
P
tot
=
ƒ(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(t
p
)
320
10
3
mW
K/W
240
R
thJS
P
tot
10
2
200
160
120
10
1
80
40
10
0 -7
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ(t
p
)
10
3
Collector-base capacitance
C
cb
=
ƒ(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ(V
EB
)
f
= 1 MHz
1.2
pF
P
totmax
/P
totDC
-
1
C
CB
,
C
EB
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
CCB
CEB
10
1
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
2
4
6
8
10
12
14
16
V
20
t
p
V
CB
,
V
EB
4
2011-07-20
BFS17W
Transition frequency
f
T
=
ƒ(I
C
)
V
CE
= parameter
3
10V
5V
3V
GHz
2
f
T
2V
1.5
1
1V
0.5
0.7V
0
0
5
10
15
20
mA
30
I
C
5
2011-07-20
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