TLP3549,TLP3549F
Photocouplers
Photorelay
TLP3549,TLP3549F
1. Applications
•
•
•
•
•
Mechanical relay replacements
Factory Automation (FA)
Programmable Logic Controllers (PLCs)
Measuring Instruments
ATE (Automatic Test Equipment)
2. General
The TLP3549 and TLP3549F photorelay consist of a photo MOSFET optically coupled to an infrared LED. It is
housed in a 8-pin DIP package. The low ON-state resistance and the high permissible ON-state current of the
TLP3549 and TLP3549F make it suitable for power line control applications.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Normally opened (1-Form-A)
OFF-state output terminal voltage: 600 V (min)
Trigger LED current: 5.0 mA (max)
ON-state current: 0.6 A (max) (A connection)
ON-state resistance: 2
Ω
(max) (A connection)
Isolation voltage: 2500 Vrms (min)
Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
UL-recognized: UL 508, File No.E499232 (Note 1)
VDE-approved: EN 60747-5-5 (Note 2)
Note 1: Please refer Absolute Maximum Ratings (UL-recognized UL 508) for UL 508 products.
Note 2: When a VDE approved type is needed, please designate the Option (D4)
(D4).
4. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
7.62-mm Pitch
TLP3549
7.0 (min)
7.0 (min)
0.4 (min)
10.16-mm Pitch
TLP3549F
8.0 (min)
8.0 (min)
0.4 (min)
Unit
mm
Start of commercial production
©2016-2019
Toshiba Electronic Devices & Storage Corporation
1
2016-05
2019-11-14
Rev.5.0
TLP3549,TLP3549F
5. Packaging (Note)
TLP3549
TLP3549(LF1,TP1)
TLP3549(LF5,TP5)
11-10C4S
11-10C401S
11-10C405S
TLP3549F
TLP3549F(LF4,TP4)
11-10C402S
11-10C404S
Note:
Through-hole type: TLP3549, TLP3549F
Lead forming option: (LF1), (LF4), (LF5)
Taping option: (TP1), (TP4), (TP5)
6. Pin Assignment
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: Drain
6: Source
7: Source
8: Drain
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-11-14
Rev.5.0
TLP3549,TLP3549F
7. Internal Circuit
8. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector OFF-state output terminal voltage
ON-state current (A connection)
ON-state current (B connection)
ON-state current (C connection)
ON-state current derating (A connection)
ON-state current derating (B connection)
ON-state current derating (C connection)
ON-state current (pulsed)
Output power dissipation
Output power dissipation derating
Junction temperature
Common Storage temperature
Operating temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
25
)
(T
a
≥
25
)
(T
a
≥
25
)
(T
a
≥
25
)
(t = 100 ms, duty = 1/10)
I
ONP
P
O
∆P
O
/∆T
a
T
j
T
stg
T
opr
T
sol
BV
S
(Note 2)
∆I
ON
/∆T
a
(Note 1)
(T
a
≥
25
)
(T
a
≥
25
)
(100
µs
pulse, 100 pps)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
P
D
∆P
D
/∆T
a
T
j
V
OFF
I
ON
(Note 1)
Note
Rating
30
-0.3
1
5
50
-0.5
125
600
0.6
0.6
1.2
-6
-6
-12
1.8
750
-7.5
125
-55 to 125
-40 to 85
260
2500
Vrms
A
mW
mW/
mA/
Unit
mA
mA/
A
V
mW
mW/
V
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: For an application circuit example, see Chapter 16.2.
Note 2: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
Note:
©2016-2019
Toshiba Electronic Devices & Storage Corporation
3
2019-11-14
Rev.5.0
TLP3549,TLP3549F
9. Recommended Operating Conditions (Note)
Characteristics
Supply voltage
Input forward current
ON-state current (A connection)
Operating temperature
Symbol
V
DD
I
F
I
ON
T
opr
Note
Min
-40
Typ.
5
Max
480
25
0.6
85
Unit
V
mA
A
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
10. Absolute Maximum Ratings (UL-recognized: UL 508) (Note) (Unless otherwise
specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector OFF-state output terminal voltage
ON-state current (A connection)
ON-state current (B connection)
ON-state current (C connection)
ON-state current derating (A connection)
ON-state current derating (B connection)
ON-state current derating (C connection)
ON-state current (pulsed)
Output power dissipation
Output power dissipation derating
Junction temperature
Common Storage temperature
Case temperature
Operating temperature
Lead soldering temperature
Isolation voltage
(10 s)
(AC, 60 s, R.H.
≤
60 %)
(T
a
≥
25
)
(T
a
≥
25
)
(T
a
≥
25
)
(T
a
≥
25
)
(t = 100 ms, duty = 1/10)
I
ONP
P
O
∆P
O
/∆T
a
T
j
T
stg
T
c
T
opr
T
sol
BV
S
(Note 2)
∆I
ON
/∆T
a
(Note 1)
(T
a
≥
25
)
(T
a
≥
25
)
(100
µs
pulse, 100 pps)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
P
D
∆P
D
/∆T
a
T
j
V
OFF
I
ON
(Note 1)
Note
Rating
30
-0.3
1
5
50
-0.5
105
600
0.6
0.6
1.2
-6
-6
-12
1.8
750
-7.5
105
-55 to 125
105
-40 to 85
260
2500
A
mW
mW/
Vrms
mA/
Unit
mA
mA/
A
V
mW
mW/
V
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: For an application circuit example, see Chapter 16.2.
Note 2: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
Note:
©2016-2019
Toshiba Electronic Devices & Storage Corporation
4
2019-11-14
Rev.5.0
TLP3549,TLP3549F
11. Recommended Operating Conditions (UL-recognized: UL 508) (Note)
Characteristics
Supply voltage
Input forward current
ON-state current(A connection)
Operating temperature
Symbol
V
DD
I
F
I
ON
T
opr
(Note 1)
(Note 1)
Note
Min
-20
Typ.
5
Max
480
19.5
0.4
85
Unit
V
mA
A
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note 1: The above recommended operating conditions are at T
a
= 60
.
However, within the derating range of the characteristic curves of "I
F
- T
a
", "I
ON
- T
a
", it can be used up to 85
.
12. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
V
F
I
R
C
t
I
OFF
C
OFF
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
V
OFF
= 600 V
V = 0 V, f = 1 MHz
Min
1.50
Typ.
1.64
70
0.05
4300
Max
1.80
10
10
Unit
V
µA
pF
µA
pF
13. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Trigger LED current
Return LED current
ON-state resistance (A connection)
ON-state resistance (B connection)
ON-state resistance (C connection)
Symbol
I
FT
I
FC
R
ON
Note
Test Condition
I
ON
= 0.6 A
I
OFF
= 1
µA
(Note 1) I
ON
= 0.6 A, I
F
= 5 mA, t < 1 s
I
ON
= 0.6 A, I
F
= 2 mA, t < 1 s
I
ON
= 1.2 A, I
F
= 2 mA, t < 1 s
Min
0.01
Typ.
0.23
0.17
1.35
Max
5.0
2
1
0.5
Ω
Unit
mA
Note 1: For an application circuit example, see Chapter 16.2.
14. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
5×10
10
2500
Typ.
0.8
10
14
Max
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
15. Switching Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Turn-on time
Turn-off time
Symbol
t
ON
t
OFF
Note
Test Condition
See Fig. 15.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 5 mA
Min
Typ.
0.8
0.07
Max
3.0
1.0
Unit
ms
Fig. 15.1 Switching Time Test Circuit and Waveform
©2016-2019
Toshiba Electronic Devices & Storage Corporation
5
2019-11-14
Rev.5.0
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