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3PMT110

Description
Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size211KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

3PMT110 Overview

Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

3PMT110 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1957272815
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Minimum breakdown voltage122 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage110 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
3PMT5.0A thru 3PMT170A
POWERMITE
Low Profile 1500 Watt
Transient Voltage Suppressor
®
SCOTTSDALE DIVISION
DESCRIPTION
These 1500 watt transient voltage suppressors offer power-handling capabilities
only found in larger packages. They are most often used for protecting against
transients from inductive switching environments or induced secondary lightning
effects as found in lower surge levels of IEC61000-4-5. With very fast response
®
times, they are also effective in protection from ESD or EFT. Powermite package
features include a full-metallic bottom that eliminates the possibility of solder-flux
entrapment during assembly. They also provide unique locking tabs acting as an
integral heat sink. With its very short terminations, parasitic inductance is minimized
to reduce voltage overshoots during fast-rise-time transients
.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Very low profile surface mount package (1.1mm)
Integral heat-sink-locking tabs
Compatible with automatic insertion equipment
Full-metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bidirectional
(CA suffix for bidirectional)
APPLICATIONS / BENEFITS
Secondary lightning transient protection
Inductive switching transient protection
Small footprint
Very low parasitic inductance for minimal
voltage overshoot
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively and
IEC61000-4-5 for surge levels defined herein
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µs)
Forward Surge Current: 200 Amps at 8.3 ms
(excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Thermal resistance: 2.5°C / watt junction to tab
130°C / watt junction to ambient with
recommended footprint
Lead and mounting temperature: 260°C for 10 s
MECHANICAL AND PACKAGING
Terminals: All terminals are tin-lead plated
Polarity: Two-leads on side are internally connected
together for anode and backside is cathode
(unidirectional devices only)
Marking: Body marked with P/N without 3PMT
prefix
(ie. 5.0A, 5.0CA, 12A, 12CA, 170A, 170CA, etc.)
Molded epoxy package meets UL94V-0
Weight: 0.072 grams (approximate)
Tape & Reel packaging per EIA-481-2
(16 mm - 6000 units/reel)
ELECTRICAL CHARACTERISTICS
MICROSEMI
PART NUMBER
STANDOFF
VOLTAGE
V
WM
VOLTS
3PMT5.0A
3PMT6.0A
3PMT6.5A
3PMT7.0A
3PMT7.5A
3PMT8.0A
3PMT8.5A
3PMT9.0A
3PMT10A
3PMT11A
3PMT12A
5
6
6.5
7
7.5
8
8.5
9.0
10
11
12
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
6.40
6.67
7.22
7.78
8.33
8.89
9.94
10.0
11.1
12.2
13.3
CLAMPING
VOLTAGE
V
C
@ I
PP
(FIGURE 4)
VOLTS
MAX
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
PEAK PULSE
CURRENT
I
PP
(FIGURE 4)
AMPS
163.0
145.6
133.9
125.0
116.3
110.3
104.2
97.4
88.2
82.4
75.3
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
1000
1000
500
200
100
50
25
10
5
5
5
TEMPERATURE
COEFFICIENT
OF V
BR
α
V(BR)
%/°C
MAX
.057
.059
.061
.065
.067
.070
.073
.076
.078
.081
.082
3PMT
Copyright
2003
10-6-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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