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FR201GB0G

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size419KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FR201GB0G Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,

FR201GB0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current55 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
CREAT BY ART
FR201G - FR207G
2.0AMPS Glass Passivated Fast Recovery Rectifiers
DO-15
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed: 260℃/10s
Mounting position: Any
Weight: 0.40 grams
Ordering Information (example)
Part No.
FR201G
Package
DO-15
Packing
1.5K / AMMO box
INNER
TAPE
52mm
Packing code
A0
Packing code
(Green)
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrnet Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@2A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
@ T
A
=25
@ T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
FR
201G
50
35
50
FR
202G
100
70
100
FR
203G
200
140
200
FR
204G
400
280
400
2
55
1.3
5
100
FR
205G
600
420
600
FR
206G
800
560
800
FR
207G
1000
700
1000
Units
V
V
V
A
A
V
uA
uA
Maximum Reverse Recovery Time (Note 2)
150
20
60
250
500
O
nS
pF
C/W
O
O
- 55 to + 150
- 55 to + 150
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:E13
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