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BCX52-16E6327

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size115KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BCX52-16E6327 Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

BCX52-16E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment1 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
VCEsat-Max0.5 V
Base Number Matches1
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